PSMN017-30PL,127 NXP Semiconductors, PSMN017-30PL,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN017-30PL,127
• Description: MOSFET N-chan 30 V 17 mohm MOSFET in TO-220
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30PL,127

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 17 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 45 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN017-30PL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
24 V
4
6 V
V
DS
8
= 15V
(A)
I
S
40
30
20
10
0
Q
0
All information provided in this document is subject to legal disclaimers.
G
003aaj423
(nC)
12
T
j
= 175°C
Rev. 2 — 3 April 2012
0.4
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Fig 16. Input, output and reverse transfer capacitances
0.8
(pF)
C
10
10
10
T
3
2
10
as a function of drain-source voltage; typical
values
j
= 25 °C
V
-1
SD
003aaj425
(V)
1.2
1
PSMN017-30PL
10
© NXP B.V. 2012. All rights reserved.
V
C
C
C
DS
003aaj424
iss
oss
rss
(V)
10
2
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