PSMN017-30PL,127 NXP Semiconductors, PSMN017-30PL,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN017-30PL,127
• Description: MOSFET N-chan 30 V 17 mohm MOSFET in TO-220
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30PL,127

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 17 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 45 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN017-30PL
Product data sheet
Fig 1.
Fig 3.
(A)
I
10
(A)
D
10
10
I
D
10
40
30
20
10
-1
3
2
1
0
10
mounting base temperature
(1) Capped at 32A due to package
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
100
150
Limit R
All information provided in this document is subject to legal disclaimers.
T
003aaj411
mb
1
DSon
(°C)
200
= V
Rev. 2 — 3 April 2012
DS
/ I
D
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
DC
PSMN017-30PL
100
V
DS
t
100 μ s
1 ms
10 ms
100 ms
p
(V)
=10 μ s
150
© NXP B.V. 2012. All rights reserved.
T
003aaj413
mb
03aa16
(°C)
10
200
2
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