PSMN017-30PL,127 NXP Semiconductors, PSMN017-30PL,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN017-30PL,127
• Description: MOSFET N-chan 30 V 17 mohm MOSFET in TO-220
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30PL,127

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 17 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 45 W
• Factory Pack Quantity: 50

NXP Semiconductors
Table 6.
PSMN017-30PL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(A)
I
D
30
20
10
0
function of drain-source voltage; typical values
T
Output characteristics; drain current as a
0
j
Characteristics
10
= 25 °C
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
4.5
1
…continued
2
V
3
GS
All information provided in this document is subject to legal disclaimers.
003aaj415
(V) = 2.4
V
DS
(V)
3.5
2.8
V
R
I
see
I
Conditions
V
S
S
3
DS
GS
G(ext)
= 10 A; V
= 10 A; dI
4
Rev. 2 — 3 April 2012
Figure 17
= 15 V; R
= 0 V; V
= 5 Ω
GS
S
DS
/dt = -100 A/µs;
L
N-channel 30 V 17 mΩ logic level MOSFET in TO220
= 0 V; T
= 1.5 Ω; V
Fig 6.
= 15 V
(A)
I
D
30
20
10
j
0
= 25 °C;
function of gate-source voltage; typical values
Transfer characteristics; drain current as a
0
GS
= 4.5 V;
1
T
j
= 175 °C
PSMN017-30PL
Min
-
-
-
-
-
-
-
2
Typ
10.7
9.2
11.4
5.1
0.89
17.3
6.5
T
j
= 25 °C
3
© NXP B.V. 2012. All rights reserved.
003aaj418
V
GS
Max
-
-
-
-
1.2
-
-
(V)
4
Unit
ns
ns
ns
ns
V
ns
nC
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