PSMN3R3-80PS,127 NXP Semiconductors, PSMN3R3-80PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN3R3-80PS,127
• Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80PS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 44 ns
• Gate Charge Qg: 135 nC
• Power Dissipation: 338 W
• Rise Time: 43 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN3R3-80PS
Product data sheet
Fig 3.
(A)
I
10
10
D
10
10
-1
3
2
1
0.1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Limit R
1
DSon
= V
All information provided in this document is subject to legal disclaimers.
DS
/ I
D
Rev. 1 — 27 October 2011
N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220
10
DC
t
100 μ s
1 ms
10 ms
100 ms
100
p
PSMN3R3-80PS
=10 μ s
V
DS
(V)
© NXP B.V. 2011. All rights reserved.
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