PSMN3R3-80PS,127 NXP Semiconductors, PSMN3R3-80PS,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN3R3-80PS,127
• Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80PS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 44 ns
• Gate Charge Qg: 135 nC
• Power Dissipation: 338 W
• Rise Time: 43 ns
• Factory Pack Quantity: 50

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN3R3-80PS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN3R3-80PS
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
drain
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
Simplified outline
N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220
SOT78 (TO-220AB)
1 2
mb
3
Graphic symbol
PSMN3R3-80PS
mbb076
G
© NXP B.V. 2011. All rights reserved.
D
S
Version
SOT78
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