PSMN016-100XS,127 NXP Semiconductors, PSMN016-100XS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN016-100XS,127
• Description: MOSFET N-CH 100V 16 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22.7 A
• Resistance Drain-source Rds (on): 13 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 46.1 W
• Factory Pack Quantity: 50

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Isolation characteristics
Table 6.
PSMN016-100XS
Product data sheet
Symbol
R
R
Symbol
C
V
Fig 5.
isol(RMS)
th(j-mb)
th(j-a)
isol
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.02
Isolation characteristics
0.2
0.1
0.05
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
single shot
Parameter
isolation capacitance
RMS isolation voltage
10
-5
10
-4
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
Conditions
f = 1 MHz
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal
waveform; clean and dust free
10
-3
Rev. 4 — 6 March 2012
10
-2
Conditions
see
vertical in free air
Figure 5
10
-1
PSMN016-100XS
1
Min
-
-
Min
-
-
P
10
t
Typ
3
55
Typ
10
-
p
T
© NXP B.V. 2012. All rights reserved.
t
003aag618
p
δ =
(s)
-
-
Max
3.25
Max
2500
T
t
p
t
10
2
Unit
K/W
K/W
Unit
pF
V
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