BSS83PH6327XT Infineon Technologies, BSS83PH6327XT Datasheet - Page 7

• Manufacturer Part Number: BSS83PH6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS83PH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 330 mA
• Resistance Drain-source Rds (on): 2 Ohms at -4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 64 ns
• Gate Charge Qg: 2.38 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 71 ns
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BSS83P BSS83PH6327XTSA1 H6327

Drain-source on-state resistance
R
parameter : I
Typ. capacitances
C = f ( V
parameter: V
Rev. 1.5
DS(on)
W
pF
10
10
10
10
5.5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60
3
2
1
0
0
BSS 83 P
DS
= f ( T
)
-5
-20
D
GS
j
)
= -0.33 A, V
-10
=0V, f =1 MHz
20
98%
typ
-15
60
-20
GS
100
= -10 V
-25
°C
V
T
V
C
C
C
j
DS
iss
oss
rss
180
-35
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-3.0
-3.0
-3.0
-3.0
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
V
V
V
V
A
0.0
0.0
0.0
0.0
-1
-2
-60
-60
-60
-60
0.0
1
0
BSS 83 P
= f ( T j )
SD
-0.4
)
-20
-20
-20
-20
GS
-0.8
p
= V
= 80 µs
20
20
20
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
98%
typ
2%
-1.6
D
60
60
60
60
= -80 µA
-2.0
100
100
100
100
2012-03-30
BSS 83 P
-2.4
°C
°C
°C
°C
V
V
T
T
T
T
SD
j
j
j
j
-3.0
160
160
160
160