BSS83PH6327XT Infineon Technologies, BSS83PH6327XT Datasheet - Page 4

• Manufacturer Part Number: BSS83PH6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS83PH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 330 mA
• Resistance Drain-source Rds (on): 2 Ohms at -4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 64 ns
• Gate Charge Qg: 2.38 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 71 ns
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BSS83P BSS83PH6327XTSA1 H6327

Rev. 1.5
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
DD
DD
DD
DD
A
A
GS
R
R
= 25 °C
= 25 °C
= -30 V, I
= -30 V, I
= -48 V, I
= -48 , I
= -48 V, I
= -48 V , I
= 0 V, I
F
D
F
F =
= -0.33
= I
D
D
= -0.33 A
D
l
S
S
= -0.33 A
= -0.33 A, V
= -0.33 A
, d i
, d i
F
F
/d t = 80 A/µs
/d t = 80 A/µs
GS
= 0 to -10 V
j
= 25 °C, unless otherwise specified
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
rr
gs
gd
g
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
-2.94
-0.84
typ.
0.12
2.38
typ.
59.4
37.5
1.1
-
-
max.
-0.33
-1.32
max.
0.18
1.65
3.57
-1.1
89
56
2012-03-30
-
BSS 83 P
Unit
nC
V
Unit
A
V
ns
nC