BSS83PH6327XT Infineon Technologies, BSS83PH6327XT Datasheet - Page 3

• Manufacturer Part Number: BSS83PH6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS83PH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 330 mA
• Resistance Drain-source Rds (on): 2 Ohms at -4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 64 ns
• Gate Charge Qg: 2.38 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 71 ns
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BSS83P BSS83PH6327XTSA1 H6327

Rev. 1.5
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
G
G
G
G
= 43
= 43
= 43
= 43
³
= 0 V, V
= 0 V, V
= 0 V, V
= -30 V, V
= -30 V, V
= -30 V, V
= -30 V, V
2* I
D
W
W
W
W
* R
DS(on)max
DS
DS
DS
GS
GS
GS
GS
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -4.5 V, I
= -4.5 V, I
= -4.5 V, I
= -4.5 V, I
, I
D
= -0.27 A
D
D
D
D
= -0.27 A,
= -0.27 A,
= -0.27 A,
= -0.27 A,
j
= 25 °C, unless otherwise specified
Page 3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
0.24
-
-
-
-
-
-
-
Values
typ.
0.47
62
19
23
71
56
61
7
max.
106
78
24
35
70
76
2012-03-30
9
-
BSS 83 P
Unit
S
pF
ns