PSMN012-25YLC,115 NXP Semiconductors, PSMN012-25YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN012-25YLC,115
• Description: MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-25YLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Resistance Drain-source Rds (on): 12.6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 26 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN012-25YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
50
40
30
20
10
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
V
GS
Q
(V) = 2.8
4
GS1
I
Q
D
N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
GS
Q
GS2
Q
8
G(tot)
Q
GD
12
All information provided in this document is subject to legal disclaimers.
3.0
003aag270
003aaa508
4.5
3.5
10
I
D
(A)
16
Rev. 1 — 25 October 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
2
6V
0
PSMN012-25YLC
4
24V
60
6
V
4.5V
DS
120
= 12V
© NXP B.V. 2011. All rights reserved.
V
8
003aag271
003aag272
GS
Q
T
j
G
= 10V
( ° C)
(nC)
180
10
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