PSMN012-25YLC,115 NXP Semiconductors, PSMN012-25YLC,115 Datasheet - Page 2

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PSMN012-25YLC,115

Manufacturer Part Number
PSMN012-25YLC,115
Description
MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN012-25YLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
33 A
Resistance Drain-source Rds (on)
12.6 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Power Dissipation
26 W
Factory Pack Quantity
1500
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN012-25YLC
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN012-25YLC
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base;
connected to drain
N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
LFPAK;
Package
Name
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 October 2011
Simplified outline
SOT669 (LFPAK;
Power-SO8)
1 2 3 4
mb
Graphic symbol
PSMN012-25YLC
mbb076
G
© NXP B.V. 2011. All rights reserved.
D
S
SOT669
Version
2 of 15

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