SiHP25N40D-GE3 Vishay/Siliconix, SiHP25N40D-GE3 Datasheet - Page 6
![no-image](/images/no-image-200.jpg)
SiHP25N40D-GE3
Manufacturer Part Number
SiHP25N40D-GE3
Description
MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHP25N40D-GE3.pdf
(8 pages)
Specifications of SiHP25N40D-GE3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
25 A
Resistance Drain-source Rds (on)
170 mOhms at 10 V
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-220AB-3
Fall Time
37 ns
Forward Transconductance Gfs (max / Min)
7.4 S
Gate Charge Qg
44 nC
Power Dissipation
278 W
Rise Time
57 ns
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91483.
S12-0625-Rev. B, 26-Mar-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
For technical questions, contact:
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Fig. 18 - For N-Channel
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
-
+
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
6
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
hvm@vishay.com
D =
-
g
www.vishay.com/doc?91000
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
SiHP25N40D
Document Number: 91483