SiHP25N40D-GE3 Vishay/Siliconix, SiHP25N40D-GE3 Datasheet - Page 2

• Manufacturer Part Number: SiHP25N40D-GE3
• Description: MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SiHP25N40D-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 25 A
• Resistance Drain-source Rds (on): 170 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Fall Time: 37 ns
• Forward Transconductance Gfs (max / Min): 7.4 S
• Gate Charge Qg: 44 nC
• Power Dissipation: 278 W
• Rise Time: 57 ns

S12-0625-Rev. B, 26-Mar-12
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
DS
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Temperature Coefficient
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
= 25 °C, unless otherwise noted)
For technical questions, contact:
SYMBOL
SYMBOL
V
R
V
R
R
t
t
I
I
C
V
I
C
C
Q
V
GS(th)
DS(on)
Q
d(on)
d(off)
I
RRM
GSS
DSS
g
Q
Q
DS
R
SM
t
thJA
thJC
I
t
t
DS
oss
SD
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
g
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
GS
GS
Reference to 25 °C, I
DS
T
= 10 V
= 10 V
J
2
= 320 V, V
dI/dt = 100 A/μs, V
= 25 °C, I
T
V
TYP.
V
V
V
J
V
TEST CONDITIONS
f = 1 MHz, open drain
GS
V
DS
DD
DS
-
-
GS
= 25 °C, I
DS
= 10 V, R
= V
= 400 V, V
= 320 V, I
= 0 V, I
V
= 50 V, I
V
[e-mail]
V
GS
DS
f = 1 MHz
GS
GS
S
GS
I
D
= ± 30 V
= 100 V,
= 13 A, V
, I
= 0 V,
= 13 A, V
F
= 0 V, T
D
D
= I
g
= 250 μA
D
= 250 μA
D
www.vishay.com/doc?91000
GS
= 24.6 
I
S
= 13 A
D
= 13 A,
D
R
= 13 A,
= 13 A
= 250 μA
= 0 V
= 20 V
J
GS
G
DS
= 125 °C
= 0 V
= 320 V
MAX.
0.45
D
S
62
MIN.
400
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Siliconix
SiHP25N40D
Document Number: 91483
TYP.
1707
0.14
177
353
0.5
7.4
1.8
4.4
19
44
12
23
21
57
40
37
24
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.17
1.2
10
88
42
86
80
74
24
78
5
1
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/°C
nA
μA
nC
μC
pF
ns
ns


V
V
S
A
V
A