SiHP25N40D-GE3 Vishay/Siliconix, SiHP25N40D-GE3 Datasheet - Page 3

• Manufacturer Part Number: SiHP25N40D-GE3
• Description: MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SiHP25N40D-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 25 A
• Resistance Drain-source Rds (on): 170 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Fall Time: 37 ns
• Forward Transconductance Gfs (max / Min): 7.4 S
• Gate Charge Qg: 44 nC
• Power Dissipation: 278 W
• Rise Time: 57 ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-0625-Rev. B, 26-Mar-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
80
60
40
20
80
60
40
20
60
50
40
30
20
10
0
0
0
0
0
0
BOTTOM 5 V
TOP
Fig. 3 - Typical Transfer Characteristics
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
T
TOP
J
= 150 °C
V
15 V
14 V
13 V
12 V
11 V
10 V
V
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5
9 V
8 V
7 V
6 V
DS
5
15 V
14 V
13 V
12 V
11 V
10 V
V
DS
9 V
8 V
7 V
6 V
5
DS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T
, Drain-to-Source Voltage (V)
J
= 25 °C
10
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
T
J
= 25 °C
10
15
15
15
20
20
5 V
T
J
For technical questions, contact:
20
= 150 °C
25
25
30
25
30
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10 000
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1000
Fig. 4 - Normalized On-Resistance vs. Temperature
100
2.5
1.5
0.5
10
24
20
16
12
3
2
1
0
1
- 60 - 40 - 20 0
8
4
0
0
0
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I
D
C
10
C
= 13 A
rss
V
oss
C
DS
T
iss
J
Q
100
, Drain-to-Source Voltage (V)
, Junction Temperature (°C)
20
g
, Total Gate Charge (nC)
20 40 60 80 100 120 140 160
30
V
C
C
C
GS
iss
rss
oss
200
40
= 0 V, f = 1 MHz
= C
= C
= C
V
V
V
gs
gd
ds
DS
DS
DS
50
+ C
V
+ C
GS
= 320 V
= 200 V
= 80 V
Vishay Siliconix
SiHP25N40D
Document Number: 91483
gd
gd
= 10 V
300
, C
60
ds
Shorted
70
400
80