SIHF12N60E-E3 Vishay/Siliconix, SIHF12N60E-E3 Datasheet - Page 7

• Manufacturer Part Number: SIHF12N60E-E3
• Description: MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHF12N60E-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 380 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220FP-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 3.8 S
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 147 W
• Rise Time: 19 ns

TO-220 FULLPAK (HIGH VOLTAGE)
Notes
1. To be used only for process drawing.
2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads.
3. All critical dimensions should C meet C
4. All dimensions include burrs and plating thickness.
5. No chipping or package damage.
Document Number: 91359
Revision: 26-Oct-09
ECN: X09-0126-Rev. B, 26-Oct-09
DWG: 5972
DIM.
Ø P
A1
A2
b2
b3
d1
d3
L1
D
A
E
b
c
e
L
n
u
v
d1
L
b
12.300
10.360
13.200
4.570
2.570
2.510
0.622
1.229
1.229
0.440
8.650
15.88
3.100
6.050
3.050
2.400
0.400
MIN.
pk
> 1.33.
e
n
E
MILLIMETERS
2.54 BSC
b2
b3
Ø P
16.120
12.920
10.630
13.730
MAX.
4.830
2.830
2.850
0.890
1.400
1.400
0.629
9.800
3.500
6.150
3.450
2.500
0.500
d3
L1
D
c
A
0.180
0.101
0.099
0.024
0.048
0.048
0.017
0.341
0.622
0.484
0.408
0.520
0.122
0.238
0.120
0.094
0.016
MIN.
Package Information
A2
A1
V
0.100 BSC
u
INCHES
Vishay Siliconix
MAX.
0.190
0.111
0.112
0.035
0.055
0.055
0.025
0.386
0.635
0.509
0.419
0.541
0.138
0.242
0.136
0.098
0.020
www.vishay.com
1