SIHF12N60E-E3 Vishay/Siliconix, SIHF12N60E-E3 Datasheet

SIHF12N60E-E3

Manufacturer Part Number

SIHF12N60E-E3

Description

MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS

Manufacturer

Vishay/Siliconix

Datasheet

1.SIHF12N60E-E3.pdf (8 pages)

Specifications of SIHF12N60E-E3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

12 A

Resistance Drain-source Rds (on)

380 mOhms at 10 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-220FP-3

Fall Time

19 ns

Forward Transconductance Gfs (max / Min)

3.8 S

Gate Charge Qg

29 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

147 W

Rise Time

19 ns

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

SIHF12N60E-E3

Manufacturer:

VISHAY

Quantity:

2 971

Company:

H&T Electronics

Part Number:

SIHF12N60E-E3

Quantity:

3 800

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

c. 1.6 mm from case.

d. I

e. Limited by maximum junction temperature.

S13-0059-Rev. D, 21-Jan-13

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt

Soldering Recommendations (Peak Temperature)

TO-220 FULLPAK

DS(on)

max. (nC)

(nC)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

(V) at T

(nC)

 I

= 50 V, starting T

max. at 25 °C ()

, dI/dt = 100 A/μs, starting T

max.

www.vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 25 °C, L = 11.6 mH, R

= 150 °C)

= 10 V

= 25 °C.

N-Channel MOSFET

E Series Power MOSFET

Single

For technical questions, contact:

650

= 25 , I

= 25 °C, unless otherwise noted)

0.38

at 10 V

= 4.5 A.

for 10 s

= 125 °C

TO-220 FULLPAK

SiHF12N60E-GE3

SiHF12N60E-E3

= 100 °C

= 25 °C

FEATURES

• Low Figure-of-Merit (FOM) R

• Low Input Capacitance (C

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions of

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

• Industrial

compliance please see

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

hvm@vishay.com

SYMBOL

www.vishay.com/doc?91000

dV/dt

, T

stg

www.vishay.com/doc?99912

iss

- 55 to + 150

)

LIMIT

± 20

0.26

600

117

300

7.8

x Q

Vishay Siliconix

Document Number: 91481

SiHF12N60E

UNIT

W/°C

V/ns

°C

Related parts for SIHF12N60E-E3

SIHF12N60E-E3 Summary of contents

Page 1

... Power Factor Correction Power Supplies (PFC) • Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting • Industrial S - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters) TO-220 FULLPAK SiHF12N60E-GE3 SiHF12N60E- °C, unless otherwise noted) C SYMBOL ° 100 ° 125 ° ...

Page 2

... dI/dt = 100 A/μ RRM while V is rising from oss DS while V is rising from oss DS 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHF12N60E Vishay Siliconix MAX. UNIT 65 °C/W 3.8 MIN. TYP. MAX. 600 - - = 0. ± 100 ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHF12N60E Vishay Siliconix = 100 120 140 160 T , Junction Temperature (° iss MHz GS C ...

Page 4

... Fig Temperature vs. Drain-to-Source Voltage 0.01 0.1 Pulse Time (s) 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHF12N60E Vishay Siliconix 50 75 100 125 150 T , Case Temperature (° 100 120 140 160 T , Junction Temperature (°C) ...

Page 5

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig Basic Gate Charge Waveform For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHF12N60E Vishay Siliconix Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. ...

Page 6

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHF12N60E Vishay Siliconix + + Document Number: 91481 ...

Page 7

TO-220 FULLPAK (HIGH VOLTAGE DIM. MIN. A 4.570 A1 2.570 A2 2.510 b 0.622 b2 1.229 b3 1.229 c 0.440 D 8.650 d1 15.88 d3 12.300 E 10.360 e L 13.200 L1 3.100 n 6.050 Ø P ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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