SIHF12N60E-E3 Vishay/Siliconix, SIHF12N60E-E3 Datasheet - Page 6
SIHF12N60E-E3
Manufacturer Part Number
SIHF12N60E-E3
Description
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHF12N60E-E3.pdf
(8 pages)
Specifications of SIHF12N60E-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Resistance Drain-source Rds (on)
380 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220FP-3
Fall Time
19 ns
Forward Transconductance Gfs (max / Min)
3.8 S
Gate Charge Qg
29 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
147 W
Rise Time
19 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91481.
S13-0059-Rev. D, 21-Jan-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
For technical questions, contact:
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Fig. 18 - For N-Channel
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
-
+
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
6
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
hvm@vishay.com
D =
-
g
www.vishay.com/doc?91000
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
Document Number: 91481
SiHF12N60E