VS-GA100TS120UPBF Vishay, VS-GA100TS120UPBF Datasheet - Page 6

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VS-GA100TS120UPBF

Manufacturer Part Number
VS-GA100TS120UPBF
Description
IGBT Modules 182 Amp 1200 Volt Half-Bridge
Manufacturer
Vishay
Datasheet

Specifications of VS-GA100TS120UPBF

Product Category
IGBT Modules
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
182 A
Maximum Operating Temperature
+ 150 C
Package / Case
INT-A-PAK
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Factory Pack Quantity
15
Revision: 26-Mar-12
Fig. 17a - Test Circuit for Measurement of I
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
240
200
160
120
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
80
+ V
Fig. 15 - Typical Reverse Recovery Time vs. dI
Fig. 17b - Test Waveforms for Circuit of Fig. 18a,
400
L1
I
C
GE
t
10 % V
d(off)
+
- V
-
V
G2
CC
www.vishay.com
+ V
CE
800
G2
+
-
t1
Defining E
I
rr
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
L2
L3
, t
dI
V
d(on)
CE
F
/dt (A/µs)
R
R
90 % V
1200
R
R
G2
G2
, t
I
G1
G1
C
off
r
, t
t
V
T
T
f
, t
V
LS = L1 + L2 + L3
V
d(off)
R
J
J
GE
CC
GE
d(off)
= 125 °C
= 25 °C
= 720 V
t2
= 60 % of BV
= ± 15 V
90 % I
, t
, t
1600
f
LM
f
E
I
I
I
off
, E
F
F
F
C
5 % I
= 200 A
= 100 A
= 50 A
=
on
, E
t1
Vce ic dt
C
V
CES
t1 + 5 µs
off(diode)
CE
L
2000
I
C
F
/dt
dt
, t
rr
, Q
rr
,
6
250
200
150
100
50
V
0
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
CC
400
V
Diode reverse
recovery energy
Fig. 16 - Typical Recovery Current vs. dI
pk
10 % + V
I
www.vishay.com/doc?91000
C
10 % I
t
d(on)
I
I
I
F
F
F
10 % V
t
= 200 A
= 100 A
= 50 A
x
C
VS-GA100TS120UPbF
G
t1
800
I
Defining E
rr
Defining E
V
CC
CE
Vishay Semiconductors
t
r
dI
t3
F
/dt (A/µs)
1200
5 % V
t
rr
DiodesEurope@vishay.com
rec
90 % I
on
V
T
T
, t
, t
R
J
J
Gate voltage D.U.T.
+ V
CE
rr
= 125 °C
= 25 °C
d(on)
= 720 V
, Q
C
G
Diode recovery
waveforms
t4
Document Number: 94428
E
rr
, t
rec
, I
1600
10 % I
r
rr
t2
E
=
Q
D.U.T. voltage
and current
I
on
pk
rr
=
t3
=
rr
V
t4
D
t
t1
x
id dt
I
V
I
t
C
I
C
t2
rr
F
C
CE
dt
V
2000
/dt
dt
CC
I
C
dt

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