VS-GA100TS120UPBF Vishay, VS-GA100TS120UPBF Datasheet - Page 3

• Manufacturer Part Number: VS-GA100TS120UPBF
• Description: IGBT Modules 182 Amp 1200 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GA100TS120UPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 182 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 26-Mar-12
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to sink per module
Mounting torque
Weight of module
1000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
For technical questions within your region: [e-mail], [e-mail],
10
1
0.5
V
Fig. 2 - Typical Output Characteristics
V
500 µs pulse width
100
CE
GE
75
50
25
0
125 °C
www.vishay.com
- Collector to Emitter Voltage (V)
= 15 V
1.0
0.1
Square wave:
case to terminal 1, 2 and 3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1.5
60 % of rated
Ideal diodes
voltage
case to heatsink
2.0
25 °C
2.5
Diode
IGBT
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
1
3.0
SYMBOL
R
R
thJC
thCS
f - Frequency (kHz)
For screws M5 x 0.8
RMS
3
of Fundamental)
TEST CONDITIONS
1000
100
10
1
4.0
10
www.vishay.com/doc?91000
V
500 µs pulse width
Fig. 3 - Typical Transfer Characteristics
GE
V
4.5
= 20 V
GE
125 °C
VS-GA100TS120UPbF
- Gate to Emitter Voltage (V)
Duty cycle: 50 %
T
T
Gate drive as specified
Power dissipation = 170 W
J
sink
5.0
= 125 °C
Vishay Semiconductors
= 90 °C
5.5
[e-mail]
TYP.
200
0.1
-
-
-
-
6.0
25 °C
Document Number: 94428
6.5
MAX.
100
0.35
0.24
4.0
3.0
-
-
7.0
7.5
UNITS
°C/W
Nm
g