VS-GA100TS120UPBF Vishay, VS-GA100TS120UPBF Datasheet
VS-GA100TS120UPBF
Specifications of VS-GA100TS120UPBF
Related parts for VS-GA100TS120UPBF
VS-GA100TS120UPBF Summary of contents
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... Any terminal to case minute ISOL ° ° Stg 1 www.vishay.com/doc?91000 VS-GA100TS120UPbF Vishay Semiconductors antiparallel diodes with ultrasoft recovery MAX. UNITS 1200 V 182 100 200 A 200 200 ± 2500 520 W 270 - 150 °C ...
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... ies oes MHz C res I = 100 720 /dt dI/dt = 1300 A/μs (rec)M 2 www.vishay.com/doc?91000 VS-GA100TS120UPbF Vishay Semiconductors MIN. TYP. MAX. UNITS 1200 - - - 2. 2.4 3.0 4.4 6 mV/°C - 136 - S - 0. 3.3 4 3.2 3 ...
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... For screws Frequency (kHz) Fig Typical Load Current vs. Frequency (Load Current = I of Fundamental) RMS 1000 V 500 µs pulse width 100 10 1 2.5 3.0 4.0 Fig Typical Transfer Characteristics 3 www.vishay.com/doc?91000 VS-GA100TS120UPbF Vishay Semiconductors TYP. MAX. UNITS - 0.24 - 0.35 °C/W 0 4.0 - 3.0 200 - Duty cycle 125 °C ...
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... 0.01 0.01 0 Rectangular Pulse Duration ( shorted 100 0 Fig Typical Gate Charge vs. Gate to Emitter Voltage 4 www.vishay.com/doc?91000 VS-GA100TS120UPbF Vishay Semiconductors = 200 100 120 150 T - Junction Temperature (°C) J Junction Temperature ...
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... Fig Typical Forward Voltage Drop vs. 16 000 000 8000 4000 0 200 400 Fig Typical Stored Charge vs www.vishay.com/doc?91000 VS-GA100TS120UPbF Vishay Semiconductors = 125 °C J measured at terminal (peak voltage) CE 300 600 900 1200 1500 - Collector to Emitter Voltage (V) CE Fig Reverse Bias SOA T = 125 ° ...
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... µs = Vce off Diode reverse recovery energy Fig. 17d - Test Waveforms for Circuit of Fig. 18a, 6 www.vishay.com/doc?91000 VS-GA100TS120UPbF Vishay Semiconductors I = 200 100 720 125 ° °C J 800 1200 ...
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... Generation 4, IGBT silicon, DBC construction - Current rating (100 = 100 A) - Circuit configuration (T = Half-bridge) - Package indicator (INT-A-PAK) - Voltage rating (120 = 1200 V) - Speed/type (U = Ultrafast) - PbF = Lead (Pb)-free 7 www.vishay.com/doc?91000 VS-GA100TS120UPbF Vishay Semiconductors 480 °C C 120 U PbF Document Number: 94428 ...
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... CIRCUIT CONFIGURATION Dimensions Revision: 26-Mar-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-GA100TS120UPbF LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95173 8 www ...
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... Document Number: 95173 Revision: 04-May-09 INT-A-PAK IGBT Ø 6.5 80 (3.15) (Ø 0.25) 14.3 (0.56) 23 (0.91) 23 (0.91 (2.60) 94 (3.70) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 5 (0.20) 37 (1.44) www.vishay.com 1 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...