VS-GA100TS120UPBF Vishay, VS-GA100TS120UPBF Datasheet - Page 2

• Manufacturer Part Number: VS-GA100TS120UPBF
• Description: IGBT Modules 182 Amp 1200 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GA100TS120UPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 182 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Note
(1)
Revision: 26-Mar-12
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold voltage
Forward transconductance
Collector to emitter leaking current
Maximum diode forward voltage
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during t
Repetitive rating; V
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
www.vishay.com
GE
= 20 V, pulse width limited by maximum junction temperature
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
V
J
SYMBOL
SYMBOL
dI
V
J
= 25 °C unless otherwise specified)
V
V
GE(th)
(rec)M
E
E
E
E
(BR)CES
t
t
t
t
C
C
I
I
Q
Q
C
CE(on)
V
= 25 °C unless otherwise noted)
d(off)
E
d(off)
E
GE(th)
d(on)
d(on)
Q
GES
Q
off
off
g
CES
ts
ts
t
I
t
t
t
t
oes
FM
res
on
on
ies
rr
rr
ge
gc
fe
r
f
r
f
g
rr
(1)
(1)
(1)
(1)
/T
/dt
J
V
I
R
R
I
V
V
T
R
R
I
V
V
T
V
V
f = 1 MHz
I
R
R
V
dI/dt = 1300 A/μs
V
V
V
I
V
V
Pulse width 50 μs, single shot
V
V
V
V
V
C
C
C
C
C
CC
CC
GE
J
CC
GE
J
GE
CC
CC
g1
g2
g1
g2
g1
g2
GE
GE
GE
CE
CE
GE
GE
GE
GE
GE
= 124 A
= 100 A
= 100 A
= 100 A
= 1.25 mA
= 25 °C
= 125 °C
= 15 
= 0 
= 15 
= 0 
= 15 
= 0 
= ± 15 V
= ± 15 V
= 0 V
= V
= 25 V, I
= 400 V
= 720 V
= 720 V
= 30 V
= 720 V
= 0 V, I
= 15 V, I
= 15 V, I
= 0 V, V
= 0 V, V
= 0 V, I
= 0 V, I
= ± 20 V
2
GE
TEST CONDITIONS
TEST CONDITIONS
, I
C
F
F
C
CE
CE
C
C
C
= 100 A
= 100 A, T
= 1 mA
= 1.25 mA
= 100 A
= 100 A, T
= 100 A
= 1200 V
= 1200 V, T
www.vishay.com/doc?91000
J
J
= 125 °C
= 125 °C
J
= 125 °C
VS-GA100TS120UPbF
Vishay Semiconductors
MIN.
1200
MIN.
[e-mail]
3.0
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18 672
Document Number: 94428
TYP.
7664
1916
TYP.
14.4
2.25
0.03
- 12
830
140
275
570
581
276
571
606
649
830
161
149
104
136
7.6
6.8
4.4
4.2
3.3
3.2
85
89
10
16
26
2
-
-
MAX.
MAX.
1245
210
412
250
2.4
6.0
1.0
4.0
3.8
10
45
3
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UNITS
UNITS
mV/°C
A/μs
mA
nC
mJ
mJ
nC
nA
pF
ns
ns
ns
V
S
V
A