STGFW35HF60W STMicroelectronics, STGFW35HF60W Datasheet - Page 9

• Manufacturer Part Number: STGFW35HF60W
• Description: IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
• Manufacturer: STMicroelectronics

Specifications of STGFW35HF60W

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 88 W
• Package / Case: TO-3PF
• Continuous Collector Current Ic Max: 18 A
• Mounting Style: Through Hole

STGF35HF60W, STGW35HF60W, STGFW35HF60W
3
Figure 17. Test circuit for inductive load
Figure 19. Switching waveform
V
CE
V
G
I
C
Test circuits
switching
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tcross
Tr(Voff)
Tf
90%
10%
90%
10%
Doc ID 17490 Rev 3
AM01504v1
AM01506v1
90%
10%
Figure 18. Gate charge test circuit
Test circuits
AM01505v1
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