STGFW35HF60W STMicroelectronics, STGFW35HF60W Datasheet - Page 7

• Manufacturer Part Number: STGFW35HF60W
• Description: IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
• Manufacturer: STMicroelectronics

Specifications of STGFW35HF60W

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 88 W
• Package / Case: TO-3PF
• Continuous Collector Current Ic Max: 18 A
• Mounting Style: Through Hole

STGF35HF60W, STGW35HF60W, STGFW35HF60W
Figure 8.
Figure 10. Switching losses vs. temperature
Figure 12. Switching losses vs. collector
V
E (µJ)
1000
GE
E (µJ)
800
600
400
200
450
400
350
300
250
200
150
16
(V)
12
0
8
4
0
10
25
0
Gate charge vs. gate-emitter
voltage
current
15
30
50
20
V
E
CC
I
V
60
R
C
ON
CE
= 20 A
G
= 400 V
= 10 Ω, T
= 400 V, V
25
V
75
CE
I
C
= 400 V, V
= 20 A, R
90
E
E
30
OFF
J
ON
= 125 °C
GE
= 15 V
G
100
GE
=10 Ω
120
35
= 15 V
E
OFF
Q
I
C
G
T
Doc ID 17490 Rev 3
40
(A)
J
150
(nC)
125
(°C)
Figure 9.
Figure 11. Switching losses vs. gate
Figure 13. Turn-off SOA
1000
I
C (pF)
C
E (µJ)
100
5000
4000
3000
2000
1000
2000
1500
1000
0.1
(A)
10
500
1
0
0
1
0
0
Capacitance variations
resistance
C
res
10
60
C
oes
10
V
GE
20
Electrical characteristics
= 15 V, R
T
V
120
f = 1 MHz
I
C
C
V
CE
= 20 A, T
= 150 °C
GE
= 400 V, V
= 0
E
30
OFF
G
100
= 10 Ω
J
180
= 125 °C
GE
C
= 15 V
40
ies
E
ON
V
R
V
CE
g
240
CE
1000
(Ω)
(V)
50
(V)
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