STGFW35HF60W STMicroelectronics, STGFW35HF60W Datasheet - Page 4

• Manufacturer Part Number: STGFW35HF60W
• Description: IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
• Manufacturer: STMicroelectronics

Specifications of STGFW35HF60W

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 88 W
• Package / Case: TO-3PF
• Continuous Collector Current Ic Max: 18 A
• Mounting Style: Through Hole

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 4.
Table 5.
Symbol
V
J
Symbol
V
V
C
(BR)CES
C
C
Q
Q
= 25 °C unless otherwise specified)
CE(sat)
I
I
Q
GE(th)
GES
CES
oes
ies
res
ge
gc
g
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Collector-emitter
breakdown voltage
(V
Collector-emitter
saturation voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Dynamic
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 17490 Rev 3
I
V
V
V
V
V
V
STGF35HF60W, STGW35HF60W, STGFW35HF60W
C
V
V
V
V
(see
GE
GE
GE
CE
CE
CE
CE
GE
CE
GE
= 1 mA
= 15 V, I
= 15V, I
= V
= 600 V
= 600 V,
= ±20 V
= 0
= 25 V, f = 1 MHz,
= 400 V, I
= 15 V,
Figure
GE
Test conditions
Test conditions
, I
C
C
C
18)
T
= 20 A,
= 20 A
= 1 mA
J
C
= 125 °C
= 20 A,
T
J
= 125 °C
Min. Typ. Max. Unit
Min. Typ. Max. Unit
3.75
600
-
-
2400
1.65
235
140
50
13
52
2
± 100
5.75
250
2.5
1
-
-
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V