STGW60H65DF STMicroelectronics, STGW60H65DF Datasheet - Page 8

• Manufacturer Part Number: STGW60H65DF
• Description: IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW60H65DF

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Power Dissipation: 360 W
• Package / Case: TO-247
• Mounting Style: Through Hole

Electrical characteristics
8/13
Figure 20. Reverse recovery charge as a
Figure 22. Maximum normalized Z
Q
rr
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
(µC)
2
1
250
V
CC
T
T
function of diode current slope
J
J
to case (Diode)
= 400 V, V
= 25 °C
= 125 °C
750
---
GE
= 15 V, I
1250
C
= 60 A
1750
th
junction
AM12735v1
di/dt (A/μs)
Doc ID 023011 Rev 4
Figure 21. Maximum normalized Z
1E-01
1E-02
K
1.E-05
to case (IGBT)
1.E-04
1.E-03
1.E-02
STGW60H65DF
1.E-01
th
Single
Pulse
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
junction
AM11861v1
t
P
(s)