STGW60H65DF STMicroelectronics, STGW60H65DF Datasheet - Page 10

• Manufacturer Part Number: STGW60H65DF
• Description: IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW60H65DF

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Power Dissipation: 360 W
• Package / Case: TO-247
• Mounting Style: Through Hole

Package mechanical data
4
10/13
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
Dim.
∅R
∅P
A1
b1
b2
L1
L2
A
D
E
S
b
c
e
L
®
packages, depending on their level of environmental compliance. ECOPACK
TO-247 mechanical data
19.85
15.45
14.20
Min.
4.85
2.20
0.40
5.30
3.70
3.55
4.50
5.30
1.0
2.0
3.0
Doc ID 023011 Rev 4
18.50
mm.
Typ.
5.45
5.50
STGW60H65DF
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
5.60
4.30
3.65
5.50
5.70
®