STGW60H65DF STMicroelectronics, STGW60H65DF Datasheet - Page 2

• Manufacturer Part Number: STGW60H65DF
• Description: IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW60H65DF

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Power Dissipation: 360 W
• Package / Case: TO-247
• Mounting Style: Through Hole

Electrical ratings
1
2/13
Electrical ratings
Table 2.
1.
Table 3.
Symbol
Symbol
I
I
V
P
T
CP
FP
V
Pulse width limited by maximum junction temperature and turn-off within RBSOA
R
R
R
t
STG
CES
T
I
I
TOT
SC
I
I
GE
C
C
F
F
thJC
thJC
thJA
J
(1)
(1)
Collector-emitter voltage (V
Continuous collector current at T
Continuous collector current at T
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
Continuous forward current at T
Total dissipation at T
Short-circuit withstand time at V
V
Storage temperature range
Operating junction temperature
Pulsed forward current
Absolute maximum ratings
Thermal data
GE
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
= 15 V
Doc ID 023011 Rev 4
Parameter
C
Parameter
= 25 °C
GE
= 0)
C
C
CC
C
C
= 100 °C
= 25 °C
= 25 °C
= 100 °C
= 400 V,
- 55 to 150
Value
Value
0.35
1.38
±20
650
120
240
120
240
360
60
60
50
6
STGW60H65DF
°C/W
°C/W
°C/W
Unit
Unit
°C
µs
W
V
A
A
A
V
A
A
A