W9412G6JH-5 Winbond Electronics, W9412G6JH-5 Datasheet - Page 28

• Manufacturer Part Number: W9412G6JH-5
• Description: IC DDR-400 SDRAM 128MB 66TSSOPII
• Manufacturer: Winbond Electronics

Specifications of W9412G6JH-5

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(12) V
(13) V
(14) V
(15) Refer to the figure below.
(16) t
(17) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
(18) t
(19) For command/address input slew rate ≥1.0 V/nS.
(20) For command/address input slew rate ≥0.5 V/nS and <1.0 V/nS.
(21) For CLK & CLK slew rate ≥1.0 V/nS (single--ended).
(22) These parameters guarantee device timing, but they are not necessarily tested on each device. They may be
(23) Slew Rate is measured between V
guaranteed by device design or tester correlation.
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For -5 speed grade at CL=2.5 and tCK=6 nS
t
AC
DAL
DAL
X
ID
ISO
is the differential clock cross point voltage where input timing measurement is referenced.
and t
is magnitude of the difference between CLK input level and CLK input level.
= (t
= ((15 nS / 6 nS) + (15 nS / 6 nS)) clocks = ((3) + (3)) clocks = 6 clocks
means {V
0 V Differential
WR
DQSCK
/t
CK
V
) + (t
ICK
depend on the clock jitter. These timing are measured at stable clock.
ID(AC)
CLK
CLK
V
V
V
ISO
SS
(CLK)+V
SS
RP
V
/t
ICK
CK
V
X
)
ICK
( CLK )}/2.
OH
V
ISO(min)
(ac) and V
V
V
ICK
X
OL
(ac).
V
- 28 -
X
V
ISO(max)
V
ICK
Publication Release Date: Apr. 02, 2010
V
X
V
ICK
W9412G6JH
V
X
V
ID(AC)
Revision A01