NAND16GW3F2AN6E NUMONYX, NAND16GW3F2AN6E Datasheet - Page 52

• Manufacturer Part Number: NAND16GW3F2AN6E
• Description: IC FLASH 16GBIT SLC 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND16GW3F2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 16G (2G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

DC and AC parameters
Table 19.
1. Standby and leakage currents refer to a single die device. For a multiple die device, their value must be multiplied for the
Table 20.
52/65
I
Symbol
Symbol
t
t
t
t
OL
t
t
t
t
t
t
CLHWH
t
WHCLH
t
t
ALHWH
t
WHALH
WHCLL
t
ALLWH
CLLWH
WHALL
V
WHDX
WHEH
WHWL
WLWH
DVWH
WLWL
ELWH
I
I
I
I
I
V
V
number of dice of the stacked device, while the active power consumption depends on the number of dice concurrently
executing different operations.
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
Alt. symbol
DC characteristics
AC characteristics for command, address, data input
V
t
t
t
t
Operating
DD
t
t
t
t
t
t
t
CLH
ALS
CLS
ALH
WH
WP
WC
DS
CS
DH
CH
Standby current (CMOS)
current
Output high voltage level
Output low voltage level
Output low current (RB)
Output leakage current
Standby current (TTL)
Input leakage current
supply voltage (erase and
Input high voltage
Input low voltage
program lockout)
Parameter
Address Latch Low to Write Enable High
Address Latch High to Write Enable High
Command Latch High to Write Enable High
Command Latch Low to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable High
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
Sequential read
(1)
Program
Erase
E = V
E = V
V
Test conditions
V
t
OUT
I
RLRL
I
E = V
OH
V
WP = 0/V
IN
OL
Parameter
IH
OL
IL,
= 0 to 3.6 V
, WP = 0/V
= 0 to 3.6 V
= -400 µA
= 2.1 mA
I
minimum
= 0.4 V
OUT
DD
–
–
–
–
–
-0.2,
= 0 mA
DD
DD
NAND08GW3F2A, NAND16GW3F2A
AL setup time
CL setup time
Data setup time
E setup time
AL hold time
CL hold time
Data hold time
E hold time
W High hold time Min
W pulse width
Write cycle time
0.8 x V
Min
-0.3
2.4
–
–
–
–
–
–
–
8
–
DD
Typ
15
15
15
10
10
–
–
–
–
–
–
–
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
V
0.2 x V
DD
Max
±10
±10
0.4
Value
30
30
30
50
1
–
2
+ 0.3
12
12
12
20
10
12
25
5
5
5
5
DD
Unit
mA
mA
mA
mA
mA
µA
µA
µA
Unit
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns