NAND16GW3F2AN6E NUMONYX, NAND16GW3F2AN6E Datasheet - Page 44

• Manufacturer Part Number: NAND16GW3F2AN6E
• Description: IC FLASH 16GBIT SLC 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND16GW3F2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 16G (2G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Software algorithms
9
9.1
44/65
Figure 29. Erase enable waveform
Figure 30. Erase disable waveform
Software algorithms
This section provides information on the software algorithms that Numonyx recommends
implementing to manage the bad blocks and extend the lifetime of the NAND device.
NAND flash memories are programmed and erased by Fowler-Nordheim tunneling using
high voltage. Exposing the device to high voltage for extended periods can cause the oxide
layer to be damaged. For this reason, the number of program and erase cycles is limited
(see
extend the number of program and erase cycles and to increase data retention, it is
recommended to implement garbage collection and wear-leveling while the implementation
of error correction code algorithms is mandatory.
To help integrate a NAND memory into an application, Numonyx can provide a full range of
software solutions: file system, sector manager, drivers, and code management.
Contact the nearest Numonyx sales office or visit www.numonyx.com for more details.
Bad block management
Devices with bad blocks have the same quality level and the same AC and DC
characteristics as devices where all the blocks are valid. A bad block does not affect the
Table 15: Program and erase times and program erase endurance cycles
I/Ox
R/B
WP
I/Ox
R/B
W
WP
W
tVHWH
tVLWH
60h
60h
NAND08GW3F2A, NAND16GW3F2A
D0h
D0h
AI14279
AI14278
for value). To