CY7C1357C-100AXC Cypress Semiconductor Corp, CY7C1357C-100AXC Datasheet - Page 20

• Manufacturer Part Number: CY7C1357C-100AXC
• Description: IC SRAM 9MBIT 100MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1357C-100AXC

• Memory Size: 9M (512K x 18)
• Package / Case: 100-LQFP
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 7.5 ns
• Maximum Clock Frequency: 100 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 180 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 2
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC voltage applied to outputs
in tri-state...........................................–0.5 V to V
DC input voltage .................................. –0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 38-05539 Rev. *H
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
13. Overshoot: V
14. T
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0 V to V
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current GND ≤ V
V
current
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL Inputs
IH
DD
(AC) < V
operating supply
Description
DD
DDQ
DD
relative to GND ........–0.5 V to +4.6 V
relative to GND....... –0.5 V to +V
+ 1.5 V (Pulse width less than t
[13, 14]
[13]
[13]
for 3.3 V I/O
for 2.5 V I/O
for 3.3 V I/O, I
for 2.5 V I/O, I
for 3.3 V I/O, I
for 2.5 V I/O, I
for 3.3 V I/O
for 2.5 V I/O
for 3.3 V I/O
for 2.5 V I/O
GND ≤ V
Input = V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0, inputs static
V
V
f = f
V
V
static
DD
DD
IN
DD
IN
DD
IN
DD
IN
DD
≥ V
MAX
≥ V
MAX
≤ 0.3 V or V
≤ 0.3 V or V
MAX
(min) within 200 ms. During this time V
= Max, I
= Max, device deselected,
= Max, device deselected,
= Max, device deselected, or
= Max, device deselected,
IH
IH
, inputs switching
, inputs switching
= 1/t
I
SS
DD
SS
DD
I
or V
DDQ
or V
≤ V
≤ V
CYC
DD
OUT
CYC
IN
/2), undershoot: V
DDQ
DDQ,
IN
OH
OH
OL
OL
+ 0.5 V
+ 0.5 V
≤ V
IN
IN
≤ V
= 8.0 mA
= 1.0 mA
= 0 mA,
= −4.0 mA
= −1.0 mA
> V
> V
output disabled
IL
DD
Test Conditions
IL
, f = 0, inputs
DDQ
DD
– 0.3 V,
– 0.3 V
IL
(AC) > –2 V (Pulse width less than t
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage........................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA.
Operating Range
Commercial 0 °C to +70 °C
Industrial
Range
IH
All speeds
All speeds
All speeds
All speeds
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
< V
DD
and V
Temperature
DDQ
–40 °C to
Ambient
+85 °C
< V
CY7C1355C, CY7C1357C
DD
.
CYC
/2).
3.135
3.135
2.375
–0.3
–0.3
Min
–30
– 5% / + 10%
2.4
2.0
2.0
1.7
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
3.3 V
V
DD
V
V
DD
DD
2.625
Max
V
250
180
110
100
3.6
0.4
0.4
0.8
0.7
40
40
30
+ 0.3 V
+ 0.3 V
–
–
5
–
5
–
5
DD
2.5 V – 5%
Page 20 of 32
to V
V
Unit
DDQ
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
DD
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