CY7C1357C-133AXI Cypress Semiconductor Corp, CY7C1357C-133AXI Datasheet
CY7C1357C-133AXI
Specifications of CY7C1357C-133AXI
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CY7C1357C-133AXI Summary of contents
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... For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05539 Rev. *E 9-Mbit (256K x 36/512K x 18) Functional Description The CY7C1355C/CY7C1357C is a 3.3V, 256K x 36/512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the ...
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... REGISTER MODE CE CLK C CEN WRITE ADDRESS ADV/ READ LOGIC CE1 CE2 CE3 SLEEP ZZ CONTROL 2 Logic Block Diagram – CY7C1357C (512K x 18) ADDRESS A0, A1, A REGISTER MODE CE CLK C CEN WRITE ADDRESS ADV/ READ LOGIC CE1 CE2 CE3 SLEEP ZZ CONTROL Document #: 38-05539 Rev A1' ...
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... Pin Configurations DQP DDQ BYTE DDQ Vss/DNU DDQ BYTE DDQ DQP 30 D Document #: 38-05539 Rev. *E 100-Pin TQFP Pinout CY7C1355C CY7C1355C CY7C1357C 80 DQP DDQ BYTE DDQ DDQ BYTE DDQ DQP A Page [+] Feedback ...
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... Pin Configurations (continued DDQ DDQ Vss/DNU BYTE DDQ DQP DDQ Document #: 38-05539 Rev. *E 100-Pin TQFP Pinout CY7C1357C CY7C1355C CY7C1357C DDQ DQP DDQ BYTE DDQ DDQ Page [+] Feedback ...
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... NC R NC/144M T NC/72M U V DDQ Document #: 38-05539 Rev. *E CY7C1355C (256K x 36 NC/18M ADV/ DQP CLK CEN DQP MODE NC/72M TMS TDI TCK TDO CY7C1357C (512K x 18 NC/18M ADV/ CLK CEN DQP MODE NC/36M A TMS TDI TCK TDO CY7C1355C CY7C1357C DDQ DQP DQ ...
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... NC B DDQ DDQ DDQ DDQ N DQP DDQ P NC/144M NC/72M A R MODE NC/36M A Document #: 38-05539 Rev. *E CY7C1355C (256K x 36 CEN CLK TDI A1 TDO TCK TMS CY7C1357C (512K x 18 CEN CLK TDI A1 TDO TCK TMS CY7C1355C CY7C1357C ADV/ NC/18M DQP SS DDQ DDQ DDQ V ...
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... CE to select/deselect the device and CE to select/deselect the device and CE to select/deselect the device and DQP s is controlled by BW correspondingly left floating selects interleaved burst sequence. DD CY7C1355C CY7C1357C are placed in a tri-state condition.The X . During s through a pull up resistor. DD Page [+] Feedback ...
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... Read/Modify/Write sequences, which can be reduced to simple Byte Write operations. Because the CY7C1355C/CY7C1357C is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQs and DQP Doing so will tri-state the output drivers ...
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... X the data portion of a write cycle, regardless of the state of OE. Burst Write Accesses The CY7C1355C/CY7C1357C has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above ...
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... Write Byte C – (DQ and DQP ) C C Write Byte D – (DQ and DQP ) D D Write All Bytes [2, 3,9] Truth Table for Read/Write Function (CY7C1357C) Read Write - No bytes written Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write All Bytes Note: 9 ...
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... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1355C/CY7C1357C incorporates a serial boundary scan test access port (TAP) in the BGA package only. The TQFP package does not offer this functionality. This part operates in accordance with IEEE Standard 1149.1-1900, but doesn’t have the set of functions required for full 1149.1 compliance ...
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... This instruction also selects the boundary scan register to be connected for serial access between the TDI and TDO in the shift-DR controller state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. CY7C1355C CY7C1357C Page [+] Feedback ...
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... CS CH 11. Test conditions are specified using the load in TAP AC Test Conditions. t Document #: 38-05539 Rev CYC TL t TMSS t TMSH t TDIS t TDIH t TDOX DON’T CARE UNDEFINED [10, 11] Over the Operating Range Description / ns CY7C1355C CY7C1357C TDOV Min. Max. Unit MHz ...
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... Defines memory type and architecture 100110 010110 Defines width and density 00000110100 00000110100 Allows unique identification of SRAM vendor 1 1 Indicates the presence register CY7C1355C CY7C1357C to 2.5V SS 1.25V 50Ω 50Ω 20pF O < +70° 3.3V ± 0.165V unless A DD Min. Max. ...
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... RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document #: 38-05539 Rev. *E Bit Size (x36) Bit Size (x18 Description CY7C1355C CY7C1357C Page [+] Feedback ...
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... Internal DQP Document #: 38-05539 Rev. *E CY7C1357C (512K x 18) Signal Signal Name Bit# ball Id Name A 1 CLK CEN MODE 5 B4 ADV/LD DQP Internal Internal Internal Internal Internal Internal DQP Internal Internal Internal C DQP 24 Internal Internal Internal Internal A 26 Internal Internal CE 27 Internal ...
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... DQP 24 Internal Internal Internal Internal R11 R10 P10 CY7C1355C CY7C1357C CY7C1357C (512K x 18) Signal Signal Name Bit# ball ID Name CLK CEN ADV/ MODE A 42 Internal Internal A 43 Internal Internal A 44 Internal Internal A 45 Internal Internal Internal 46 N1 DQP B Internal Internal 48 L1 ...
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... DD ≥ V ≤ inputs /2), undershoot: V (AC) > –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < V and CY7C1355C CY7C1357C + 0.5V DD Ambient Temperature DDQ 0°C to +70°C 3.3V – 5%/+10% 2.5V – Min. Max. Unit 3.135 3.6 3.135 V DD 2.375 2 ...
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... EIA/JESD51 317Ω 3.3V V DDQ GND 351Ω INCLUDING JIG AND (b) SCOPE R = 1667Ω 2.5V V DDQ GND 1538Ω INCLUDING JIG AND (b) SCOPE CY7C1355C CY7C1357C 119 BGA 165 FBGA Max. Max. Unit 119 BGA 165 FBGA Package Package Unit °C/W 34 ...
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... DDQ is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ CY7C1355C CY7C1357C –133 –100 Max. Min. Max. Unit 4 ...
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... D(A2) D(A2+1) Q(A3) Q(A4) t OEHZ BURST READ READ BURST WRITE Q(A3) Q(A4) READ D(A2+1) Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH HIGH CY7C1355C CY7C1357C OEV t CHZ Q(A4+1) D(A5) Q(A6) D(A7) t DOH t OELZ WRITE READ WRITE DESELECT D(A5) Q(A6) D(A7) is LOW HIGH ...
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... Document #: 38-05539 Rev CDV t DOH t OEV t CLZ D(A2) D(A2+1) Q(A3) Q(A4) t OEHZ BURST READ READ BURST WRITE Q(A3) Q(A4) READ Q(A4+1) DON’T CARE UNDEFINED CY7C1355C CY7C1357C CHZ Q(A4+1) D(A5) Q(A6) D(A7) t DOH t OELZ WRITE READ WRITE DESELECT D(A5) Q(A6) D(A7) Page [+] Feedback ...
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... Notes: 26. Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device. 27. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05539 Rev ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1355C CY7C1357C Page [+] Feedback ...
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... Fine-Pitch Ball Grid Array ( 1.4 mm) CY7C1357C-133BZC CY7C1355C-133BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) Lead-Free CY7C1357C-133BZXC CY7C1355C-133AXI 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1357C-133AXI CY7C1355C-133BGI 51-85115 119-ball Ball Grid Array ( 2.4 mm) CY7C1357C-133BGI CY7C1355C-133BGXI 51-85115 119-ball Ball Grid Array ( 2.4 mm) Lead-Free CY7C1357C-133BGXI CY7C1355C-133BZI 51-85180 165-ball Fine-Pitch Ball Grid Array ( ...
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... BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS A CY7C1355C CY7C1357C 1.40±0.05 12°±1° A SEE DETAIL (8X) ...
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... Package Diagrams (continued) A1 CORNER 0.70 REF. 12.00 30° TYP. SEATING PLANE C Document #: 38-05539 Rev. *E 119-Ball BGA ( 2.4 mm) (51-85115) Ø1.00(3X) REF 0.15(4X) CY7C1355C CY7C1357C Ø0. Ø0. Ø0.75±0.15(119X 1.27 3.81 7.62 14.00±0.20 51-85115-*B Page [+] Feedback ...
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... PACKAGE WEIGHT : 0.475g SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE WEIGHT : 0.475g PACKAGE CODE : BB0AC JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE CODE : BB0AC CY7C1355C CY7C1357C BOTTOM VIEW PIN 1 CORNER BOTTOM VIEW PIN 1 CORNER Ø0. Ø0. Ø0. Ø ...
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... Document History Page Document Title: CY7C1355C/CY7C1357C 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL™ Architecture Document Number: 38-05539 Orig. of REV. ECN NO. Issue Date Change ** 242032 See ECN *A 332059 See ECN *B 351895 See ECN *C 377095 See ECN *D 408298 See ECN *E 501793 See ECN Document #: 38-05539 Rev ...