CY7C1357C-100AXC Cypress Semiconductor Corp, CY7C1357C-100AXC Datasheet

IC SRAM 9MBIT 100MHZ 100LQFP

CY7C1357C-100AXC

Manufacturer Part Number
CY7C1357C-100AXC
Description
IC SRAM 9MBIT 100MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1357C-100AXC

Memory Size
9M (512K x 18)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
7.5 ns
Maximum Clock Frequency
100 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
180 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
2
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture
Features
Cypress Semiconductor Corporation
Document Number: 38-05539 Rev. *H
Note
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
Can support up to 133-MHz bus operations with zero wait
states
Pin compatible and functionally equivalent to ZBT™ devices
Internally self-timed output buffer control to eliminate the need
to use OE
Registered inputs for flow-through operation
Byte write capability
3.3 V / 2.5 V I/O power supply (V
Fast clock-to-output times
Clock enable (CEN) pin to enable clock and suspend operation
Synchronous self-timed writes
Asynchronous output enable
Available in JEDEC-standard and Pb-free 100-pin TQFP,
Pb-free and non Pb-free 119-ball BGA package and 165-ball
FBGA package
Three chip enables for simple depth expansion.
Automatic power-down feature available using ZZ mode or CE
deselect
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability—linear or interleaved burst order
Low standby power
Data is transferred on every clock
6.5 ns (for 133-MHz device)
DDQ
)
198 Champion Court
9-Mbit (256 K × 36 / 512 K × 18) Flow-through
Functional Description
The CY7C1355C/CY7C1357C
512 K × 18 synchronous flow-through burst SRAM designed
specifically to support unlimited true back-to-back read/write
operations
CY7C1355C/CY7C1357C is equipped with the advanced
No Bus Latency (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
through the SRAM, especially in systems that require frequent
write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
clock enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133-MHz device).
Write operations are controlled by the two or four byte write
select (BW
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated during
the data portion of a write sequence.
SRAM with NoBL™ Architecture
X
San Jose
) and a write enable (WE) input. All writes are
without
CY7C1355C, CY7C1357C
,
the
CA 95134-1709
insertion
[1]
is a 3.3 V, 256 K × 36 /
of
1
, CE
Revised April 1, 2011
wait
2
, CE
408-943-2600
states.
3
) and an
The
[+] Feedback

Related parts for CY7C1357C-100AXC

CY7C1357C-100AXC Summary of contents

Page 1

... K × 18 synchronous flow-through burst SRAM designed specifically to support unlimited true back-to-back read/write operations without CY7C1355C/CY7C1357C is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent write-read transitions ...

Page 2

... MODE CE CLK C CEN WRITE ADDRESS ADV/ READ LOGIC CE1 CE2 CE3 SLEEP ZZ CONTROL Document Number: 38-05539 Rev A1 A0 BURST ADV/LD LOGIC C REGISTER WRITE WRITE REGISTRY DRIVERS AND DATA COHERENCY CONTROL LOGIC CY7C1355C, CY7C1357C MEMORY ARRAY DQs F T DQP DQP DQP DQP ...

Page 3

... Logic Block Diagram – CY7C1357C (512 K × 18) ADDRESS A0, A1, A REGISTER MODE CE CLK C CEN ADV/ READ LOGIC CE1 CE2 CE3 SLEEP ZZ CONTROL Document Number: 38-05539 Rev A1 A0 BURST ADV/LD LOGIC C WRITE ADDRESS REGISTER WRITE WRITE REGISTRY DRIVERS AND DATA COHERENCY CONTROL LOGIC ...

Page 4

... TAP AC Switching Characteristics ............................... 15 3.3 V TAP AC Test Conditions ....................................... 16 3.3 V TAP AC Output Load Equivalent ......................... 16 2.5 V TAP AC Test Conditions ....................................... 16 2.5 V TAP AC Output Load Equivalent ......................... 16 Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C TAP DC Electrical Characteristics and Operating Conditions ..................................................... 16 Identification Register Definitions ................................ 16 Scan Register Sizes ....................................................... 17 Identification Codes ....................................................... 17 119-ball BGA Boundary Scan Order ...

Page 5

... Maximum CMOS standby current Pin Configurations DQP DDQ BYTE DDQ Vss/DNU DDQ BYTE DDQ DQP 30 D Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C 133 MHz 6.5 250 40 100-pin TQFP Pinout CY7C1355C 100 MHz Unit 7.5 ns 180 DQP DDQ BYTE DDQ DDQ BYTE ...

Page 6

... Pin Configurations (continued DDQ DDQ Vss/DNU BYTE DDQ DQP DDQ Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C 100-pin TQFP Pinout CY7C1357C DDQ DQP DDQ BYTE DDQ DDQ Page [+] Feedback ...

Page 7

... NC R NC/144M NC/72M DDQ Document Number: 38-05539 Rev. *H CY7C1355C (256 K × 36 NC/18M ADV/ DQP CLK CEN DQP MODE NC/72M TMS TDI TCK TDO CY7C1357C (512 K × 18 NC/18M ADV/ CLK CEN DQP MODE NC/36M A TMS TDI TCK TDO CY7C1355C, CY7C1357C DDQ DQP DQ B ...

Page 8

... V B DDQ DDQ DDQ N DQP DDQ P NC/144M NC/72M A R MODE NC/36M A Document Number: 38-05539 Rev. *H CY7C1355C (256 K × 36 CEN CLK TDI A1 TDO TCK TMS CY7C1357C (512 K × 18 CEN CLK TDO A TDI A A0 TCK TMS CY7C1355C, CY7C1357C ADV/ NC/18M DQP SS DDQ DDQ ...

Page 9

... CE to select/deselect the device and CE to select/deselect the device and CE to select/deselect the device and DQP s is controlled by BW correspondingly left floating selects interleaved burst sequence. DD CY7C1355C, CY7C1357C are placed in a tri-state condition.The X . During s through a pull-up DD Page [+] Feedback ...

Page 10

... This pin is not available on TQFP packages. SS Burst Read Accesses The CY7C1355C/CY7C1357C has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the above ...

Page 11

... X write cycle, regardless of the state of OE. Burst Write Accesses The CY7C1355C/CY7C1357C has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial ...

Page 12

... L H None Next Current None [ data when OE is active valid. Appropriate write will be done based on which byte write is active. X CY7C1355C, CY7C1357C OE CEN CLK L->H Tri-state L->H Tri-state L->H Tri-state L->H Tri-state L->H Data out ( L->H Data out ( L->H Tri-state L->H Tri-state L-> ...

Page 13

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1355C/CY7C1357C incorporates a serial boundary scan test access port (TAP) in the BGA package only. The TQFP package does not offer this functionality. This part operates in accordance with IEEE Standard 1149.1-1900, but doesn’t have the set of functions required for full 1149.1 compliance. These ...

Page 14

... Once the data is captured possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. CY7C1355C, CY7C1357C ). The SRAM clock input might not be CH Page [+] Feedback ...

Page 15

... Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions CYC TL t TMSS t TMSH t TDIS t TDIH t TDOX DON’T CARE UNDEFINED Description / ns CY7C1355C, CY7C1357C TDOV Min Max Unit 50 – ns – 20 MHz 20 – – ns – – ...

Page 16

... Reserved for Internal Use 001001 001001 Defines memory type and architecture 100110 010110 Defines width and density 00000110100 00000110100 Allows unique identification of SRAM vendor 1 1 Indicates the presence register CY7C1355C, CY7C1357C to 2 1.25V 50Ω 50Ω 20pF O Min Max Unit 2.4 – ...

Page 17

... Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C Bit Size (× 36) Bit Size (× 18 Description ...

Page 18

... Internal DQP Document Number: 38-05539 Rev. *H CY7C1357C (512 K × 18) Signal Signal Bit# ball Id Name Name A 1 CLK CEN MODE 5 B4 ADV/LD DQP Internal Internal Internal Internal Internal Internal DQP Internal Internal Internal C DQP 24 Internal Internal Internal Internal A 26 Internal Internal CE 27 ...

Page 19

... C DQP 24 Internal Internal Internal Internal R11 R10 P10 CY7C1355C, CY7C1357C CY7C1357C (512 K × 18) Signal Signal Bit# ball ID Name Name CLK CEN ADV/ MODE A 42 Internal Internal A 43 Internal Internal A 44 Internal Internal A 45 Internal Internal Internal 46 N1 DQP B Internal Internal 48 L1 ...

Page 20

... Max, device deselected, All speeds ≥ V ≤ inputs /2), undershoot: V (AC) > –2 V (Pulse width less than t CYC IL (min) within 200 ms. During this time V < V and CY7C1355C, CY7C1357C Ambient DDQ Temperature 3.3 V 2.5 V – 5% – 10 –40 ° +85 °C Min Max Unit 3.135 3 ...

Page 21

... EIA/JESD51 317 Ω 3 DDQ GND 351 Ω INCLUDING JIG AND (b) SCOPE R = 1667 Ω 2 DDQ GND 1538 Ω INCLUDING JIG AND (b) SCOPE CY7C1355C, CY7C1357C 119 BGA 165 FBGA Unit Max Max 119 BGA 165 FBGA Unit Package Package °C/W 34 ...

Page 22

... V. DDQ is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ CY7C1355C, CY7C1357C –100 Unit Max Min Max – 1 – ms – 10 – ...

Page 23

... CLZ t OEV D(A2) D(A2+1) Q(A3) Q(A4) t OEHZ BURST READ READ BURST WRITE Q(A3) Q(A4) READ Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH HIGH CY7C1355C, CY7C1357C CHZ Q(A4+1) D(A5) Q(A6) D(A7) t DOH t OELZ WRITE READ WRITE DESELECT D(A5) Q(A6) D(A7) is LOW HIGH ...

Page 24

... DOH t OEV t CLZ Q(A3) Q(A4) D(A2+1) t OEHZ t OELZ READ READ BURST Q(A3) Q(A4) READ Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH HIGH CY7C1355C, CY7C1357C CHZ Q(A4+1) D(A5) Q(A6) D(A7) t DOH WRITE READ WRITE DESELECT D(A5) Q(A6) D(A7) is LOW HIGH ...

Page 25

... Outputs (Q) Notes 28. Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device. 29. DQs are in high Z when exiting ZZ sleep mode. Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C t ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE ...

Page 26

... Speed Grade (133 MHz / 100 MHz) Process Technology ≥ 90nm 135X = 1355 / 1357 1355 = FT, 256 Kb × Mb) 1357 = FT, 512 Kb × Mb) CY7C = Cypress SRAMs Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C www.cypress.com and refer to the product Part and Package Type Operating Range Commercial Commercial ...

Page 27

... Package Diagrams 100-pin Thin Plastic Quad Flatpack (14 × 20 × 1.4 mm), 51-85050 Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C 51-85050 *D Page [+] Feedback ...

Page 28

... Package Diagrams (continued) Document Number: 38-05539 Rev. *H 119-ball BGA (14 × 22 × 2.4 mm), 51-85115 CY7C1355C, CY7C1357C 51-85115 *C Page [+] Feedback ...

Page 29

... Package Diagrams (continued) 165-ball FBGA (13 × 15 × 1.4 mm), 51-85180 Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C 51-85180 *C Page [+] Feedback ...

Page 30

... TDI test data input TMS test mode select TDO test data output TQFP thin quad flat pack WE write enable Document Number: 38-05539 Rev. *H CY7C1355C, CY7C1357C Document Conventions Units of Measure Symbol Unit of Measure ns nano seconds V Volts µA micro Amperes mA milli Amperes ...

Page 31

... Updated Ordering Information and added Added Acronyms and Units of Measure. Minor edits and updated in new template. NJY Removed following pruned parts from ordering information table. CY7C1355C-133BGC CY7C1357C-100AXC Updated package diagram spec 51-85050 to *D. CY7C1355C, CY7C1357C ≥ V ≤ 0.3V ≥ V – 0. < V < ...

Page 32

... Document Number: 38-05539 Rev. *H NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All product and company names mentioned in this document are the trademarks of their respective holders cypress.com/go/plc Revised April 1, 2011 CY7C1355C, CY7C1357C PSoC Solutions psoc.cypress.com/solutions PSoC 1 | ...

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