NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 35

IC FLASH 4GBIT 48TSOP

NAND04GW3B2DN6E

Manufacturer Part Number
NAND04GW3B2DN6E
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND04GW3B2DN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND04GW3B2DN6E
Manufacturer:
StarMicro
Quantity:
872
Part Number:
NAND04GW3B2DN6E
Manufacturer:
ST
Quantity:
5 645
Part Number:
NAND04GW3B2DN6E
Manufacturer:
ST
Quantity:
8 000
Part Number:
NAND04GW3B2DN6E
Manufacturer:
ST
0
Part Number:
NAND04GW3B2DN6E
Manufacturer:
ST
Quantity:
20 000
NAND04G-B2D, NAND08G-BxC
6.9
Figure 20. Page organization
Table 12.
2nd 528-byte EDC unit
3rd 528-byte EDC unit
4th 528-byte EDC unit
1st 528-byte EDC unit
EDC unit
Error detection code (EDC)
The EDC (error detection code) is performed automatically during all program operations. It
starts immediately after the device becomes busy.
The EDC detects 1 single bit error per EDC unit. Each EDC unit has a density of 528 bytes
(or 264 words), split into 512 bytes of main area and 16 bytes of spare area (or
256 + 8 words). Refer to
results can only be retrieved during copy back program and multiplane copy back operations
using the Read EDC Status Register command (see
register).
To properly use the EDC, the following conditions apply:
Address definition for EDC units (x8 devices)
256 words)
(512 bytes/
Page program operations must be performed on a whole page, or on whole EDC unit(s)
The modification of the content of an EDC unit using a random data input before the
copy back program, must be performed on the whole EDC unit. It can only be done
once per EDC unit. Any partial modification of the EDC unit results in the corruption of
the on-chip EDCs.
A area
Main area (2048 bytes/1024 words)
256 words)
(512 bytes/
B area
Area name
C
D
A
B
256 words)
(512 bytes/
Table 12
C area
Main area
256 words)
(512 bytes/
Column address
and
Page = 4 EDC units
D area
1536 to 2047
1024 to1535
512 to 1023
0 to 511
Figure 20
(16 bytes/
8 words)
E area
for EDC unit addresses definition. EDC
Spare area (64 bytes/32 words)
(16 bytes/
8 words)
Section 6.13: Read EDC status
F area
Area name
G
H
E
F
(16 bytes/
8 words)
G area
Spare area
(16 bytes/
8 words)
H area
Device operations
Column address
2048 to 2063
2064 to 2079
2080 to 2095
2096 to 2111
AI13179b
35/72

Related parts for NAND04GW3B2DN6E