IDT71V632S8PFG IDT, Integrated Device Technology Inc, IDT71V632S8PFG Datasheet - Page 4

IC SRAM 2MBIT 8NS 100TQFP

IDT71V632S8PFG

Manufacturer Part Number
IDT71V632S8PFG
Description
IC SRAM 2MBIT 8NS 100TQFP
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT71V632S8PFG

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
2M (64K x 32)
Speed
8ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.63 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
71V632S8PFG
800-1486

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT71V632S8PFG
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT71V632S8PFG8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
3. I/O terminals.
Capacitance
(T
NOTE:
1. This parameter is guaranteed by device characterization, but not production
y S
C
C
y S
P
I
V
V
T
T
T
O
IDT71V632, 64K x 32, 3.3V Synchronous SRAM
with Pipelined Outputs and Single Cycle Deselect
A
B
S
T
A
N I
I
E T
E T
U
O /
A I
T
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
m
m
tested.
T
G
= +25°C, f = 1.0MHz, TQFP package)
R
R
S
DD
b
b
M
M
l o
l o
) 2 (
) 3 (
, V
DDQ
I
I
p n
O /
and Input terminals only.
t u
a C
R
R
R
O
S
o P
D
e T
e T
e T
i t a
s e
s e
o t
C
p
a C
a p
m r
m r
m
w
r e
a r
a P
O
g n
e p
e p
a p
e p
r e
t i c
n i
n i
i t a
e g
u
a r
l a
t c
l a
t c
p t
t i c
a r
D
n a
g n
m
t u
e T
s s i
u t
n a
o V
o t
o V
o t
e c
e
e T
e r
m
u C
e c
p i
r e t
G
G
a t l
a t l
m
e p
U
i t a
N
N
e r r
e g
e g
) 1 (
e p
d n
D
D
a r
n o
t n
a r
r e
u t
w
w
h t i
h t i
e r
u t
B
e r
s a i
V
C
V
O
n o
N I
U
0 –
T
i d
=
=
0 –
5 .
o i t
d 3
5 5
5 5
0
d 3
5 .
V
o t
s n
V
o t
l a
o t
o t
V
1
0 5
o t
V
0 .
e u
+
1 +
1 +
D
4 +
(1)
0 7
D
0 +
5 2
5 2
6 .
M
5 .
6
7
. x a
6 3
6 3
U
9 1
m
9 1
U
o
o
o
W
V
V
t i n
F p
F p
C
C
C
A
l b t
t i n
l b t
5 0
6 0
6.42
4
Recommended Operating
Temperature and Supply Voltage
Recommended DC Operating
Conditions
NOTES:
1. V
2. V
3. V
y S
V
V
V
V
V
V
D
D
S
H I
H I
L I
o C
m
D
D
, S
n I
Q
IH
IH
IL
b
G
m
V
u d
l o
a r
S
(min) = –1.0V for pulse width less than t
m
(max) = V
(max) = 6.0V for pulse width less than t
r t s
S
e d
e
Q
c r
l a i
l a i
a P
o C
I
r G
I
I
I
O /
p n
p n
p n
u o
DDQ
Commercial and Industrial Temperature Ranges
a r
e r
t u
t u
t u
u S
m
d n
0
0 4
i H
i H
o L
e T
u S
p p
C °
e
+ 1.0V for pulse width less than t
h g
h g
C °
r e t
m
w
p p
y l
o t
e p
o V
o V
o V
y l
o t
o V
a r
+
a t l
o V
a t l
a t l
+
0 7
a t l
u t
5 8
e g
e g
e g
a t l
C °
e g
e r
C °
e g
n I
I
O /
u p
V
V 0
V 0
S
s t
S
CYC
CYC
0 –
3
3
3
3
M
3 .
3 .
1 .
1 .
2
2
3 .
0
. n i
0 .
0 .
/2, once per cycle.
/2, once per cycle.
+ V
+ V
5 3
5 3
) 3 (
V
0 1
0 1
D
CYC
D
5 - /
5 - /
V
/2, once per cycle.
D
%
%
D
5
M
. 3
. 3
Q
0
0 .
0
0 +
a
8 .
3 6
3 6
. x
) 1 (
3
3
3 .
3 .
3 .
) 2 (
+ V
+ V
V
D
6 3
6 3
0 1
0 1
D
9 1
9 1
Q
U
5 - /
5 - /
V
V
V
V
V
V
l b t
t i n
l b t
%
%
4 0
3 0

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