ESDALC6-4N4 STMicroelectronics, ESDALC6-4N4 Datasheet - Page 3

• Manufacturer Part Number: ESDALC6-4N4
• Description: TVS Diode Arrays 7V 9.5pF ESD Array 70nA 4-Lines 6V
• Manufacturer: STMicroelectronics
• Series: ESDr

Specifications of ESDALC6-4N4

• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Breakdown Voltage: 6 V
• Clamping Voltage: 10 V
• Peak Surge Current: 2.3 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: + 25 C
• Maximum Operating Temperature: + 25 C
• Capacitance: 9.5 pF
• Case Height: 0.38 mm
• Package / Case: uQFN-4L
• Peak Pulse Power Dissipation: 27 W

ESDALC6-4N4
Figure 3.
Figure 5.
Figure 7.
10.0
1.0
0.1
10.0
60
50
40
30
20
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
25
7
I (A)
0
PP
35
45
1
55
Peak pulse power versus initial
junction temperature (typical
values, 8/20 µs waveform)
Clamping voltage versus peak
pulse current (typical values,
8/20 µs waveform)
Junction capacitance versus
reverse voltage applied
(typical values)
8
65
75
2
85
9
95 105 115 125 135 145 155 165 175
3
10
4
V
osc
11
F=1 MHz
T
=30mV
Vr=0V
j
=25 °C
5
V
Doc ID 022191 Rev 2
CL
T (°C)
V
j
RMS
(V)
R
(V)
6
12
Figure 4.
Figure 6.
Figure 8.
2.0
1.0
0.0
10.00
100
10
1.00
0.10
1
0.8
10
I (A)
P (W)
FM
25
PP
V
R
=V
35
Peak pulse power versus
exponential pulse duration (typical
values)
Forward voltage drop versus peak
forward current (typical values)
Leakage current versus junction
temperature (typical values)
RM=
3V
1.3
45
100
55
1.8
65
Characteristics
75
V (V)
T
t (µs)
FM
p
j
(°C)
1000
3/11
2.3
85