CY62128EV30LL-45ZXI Cypress Semiconductor Corp, CY62128EV30LL-45ZXI Datasheet

IC SRAM 1MBIT 45NS 32TSOP

CY62128EV30LL-45ZXI

Manufacturer Part Number
CY62128EV30LL-45ZXI
Description
IC SRAM 1MBIT 45NS 32TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY62128EV30LL-45ZXI

Memory Size
1M (128K x 8)
Package / Case
32-TSOP I
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
16 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V, 3.3 V
Density
1Mb
Access Time (max)
45ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3V
Address Bus
17b
Package Type
TSOP-I
Operating Temp Range
-40C to 85C
Supply Current
16mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2067
CY62128EV30LL-45ZXI

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Manufacturer
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Price
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1-Mbit (128 K × 8) Static RAM
Features
Note
Cypress Semiconductor Corporation
Document #: 38-05579 Rev. *I
Logic Block Diagram
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at
Very high speed: 45 ns
Temperature ranges:
Wide voltage range: 2.2 V to 3.6 V
Pin compatible with CY62128DV30
Ultra low standby power
Ultra low active power
Easy memory expansion with CE
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Offered in Pb-free 32-pin SOIC, 32-pin thin small outline
package (TSOP) I, and 32-pin shrunk thin small outline
package (STSOP) packages
Industrial: –40 °C to +85 °C
Typical standby current: 1 µA
Maximum standby current: 4 µA
Typical active current: 1.3 mA at f = 1 MHz
CE 2
CE 1
WE
OE
1
, CE
A 0
A 1
A 2
A 3
A 4
A 5
A 6
A 7
A 8
A 10
A 11
A 9
2,
and OE features
198 Champion Court
COLUMN DECODER
INPUT BUFFER
128K x 8
ARRAY
Functional Description
The CY62128EV30
module organized as 128 K words by 8-bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE
eight input and output pins (I/O
high impedance state when the device is deselected (CE
or CE
operation is in progress (CE
LOW).
To write to the device, take chip enable (CE
HIGH) and write enable (WE) inputs LOW. Data on the eight I/O
pins is then written into the location specified on the address pin
(A
To read from the device, take chip enable (CE
HIGH) and output enable (OE) LOW while forcing write enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
1-Mbit (128 K × 8) Static RAM
0
POWER
DOWN
through A
2
LOW), the outputs are disabled (OE HIGH), or a write
San Jose
16
).
http://www.cypress.com.
[1]
,
is a high performance CMOS static RAM
CA 95134-1709
CY62128EV30 MoBL
1
LOW and CE
0
through I/O
1
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Revised January 6, 2011
HIGH or CE
7
2
) are placed in a
1
1
HIGH and WE
LOW and CE
LOW and CE
408-943-2600
®
2
) in portable
LOW). The
1
HIGH
®
2
2
[+] Feedback

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CY62128EV30LL-45ZXI Summary of contents

Page 1

... Note 1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at Cypress Semiconductor Corporation Document #: 38-05579 Rev. *I 1-Mbit (128 K × 8) Static RAM Functional Description The CY62128EV30 module organized as 128 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ ...

Page 2

Contents Pin Configuration ............................................................. 3 Product Portfolio .............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 Data Retention Characteristics ....................................... 5 Switching Characteristics ................................................ 6 Switching Waveforms ...................................................... ...

Page 3

... Top View (not to scale Product Portfolio Product Range Min CY62128EV30LL Industrial Notes 2. NC pins are not connected on the die. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Document #: 38-05579 Rev I/O ...

Page 4

... CMOS level to meet the Document #: 38-05579 Rev input voltage [4, 5] Output current into outputs (LOW) .............................. 20 mA Static discharge voltage.......................................... > 2001 V (MIL-STD-883, method 3015) Latch-up current ..................................................... > 200 mA Operating Range + 0.3 V Device CC(max) CY62128EV30LL + 0.3 V CC(max) Test Conditions I = –0 –1.0 mA, V > 2. 0.1 mA ...

Page 5

Capacitance Parameter Description [9] C Input capacitance Output capacitance OUT Thermal Resistance Parameter [9] Description  Thermal resistance Still air, soldered 4.5 inch, JA (junction to ambient) two-layer printed circuit board  ...

Page 6

... HZOE HZCE HZWE 17. The internal write time of the memory is defined by the overlap of WE terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. Document #: 38-05579 Rev. *I Figure 5. Data Retention Waveform ...

Page 7

... DATA I/O NOTE t HZOE Notes 18. The internal write time of the memory is defined by the overlap of WE terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 19. The device is continuously selected HIGH for read cycle. ...

Page 8

... Notes 26 the logical combination of CE and CE . When 27. The internal write time of the memory is defined by the overlap of WE write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 28. Data I/O is high impedance 29 goes HIGH or CE goes LOW simultaneously with WE HIGH, the output remains in high impedance state ...

Page 9

... Ordering Information Speed Ordering Code (ns) 45 CY62128EV30LL-45SXI CY62128EV30LL-45ZXI CY62128EV30LL-45ZAXI Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 621 8 E V30 Document #: 38-05579 Rev. *I Package Package Type Diagram 51-85081 32-pin 450-Mil SOIC (Pb-free) 51-85056 32-pin TSOP Type I (Pb-free) ...

Page 10

Package Diagrams Figure 11. 32-pin (450 Mil) Molded SOIC, 51-85081 Document #: 38-05579 Rev. *I ® CY62128EV30 MoBL 51-85081 *C Page [+] Feedback ...

Page 11

Package Diagrams (continued) Figure 12. 32-pin Thin Small Outline Package Type mm), 51-85056 Document #: 38-05579 Rev. *I ® CY62128EV30 MoBL 51-85056 *E Page [+] Feedback ...

Page 12

Package Diagrams (continued) Figure 13. 32-pin Shrunk Thin Small Outline Package (8 x 13.4 mm), 51-85094 Document #: 38-05579 Rev. *I ® CY62128EV30 MoBL 51-85094 *E Page [+] Feedback ...

Page 13

... Acronym Description CMOS complementary metal oxide semiconductor CE chip enable I/O input/output OE output enable SRAM static random access memory TSOP thin small outline package STSOP shrunk thin small outline package SOIC small outline integrated circuit WE write enable Document Conventions Units of Measure Symbol ...

Page 14

... Changed the Maximum rating of Ambient Temperature with Power Applied from 55°C to +125°C to –55°C to +125°C. Corrected “t ” spec description in the “Switching Characteristics” table. PD VKN Included “CY62128EV30LL-45ZAXA” part in the Ordering Information table VKN Added footnote #21 related to chip enable Updated package diagrams Updated template AJU ...

Page 15

... Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement ...

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