CY7C1399BN-12VXC Cypress Semiconductor Corp, CY7C1399BN-12VXC Datasheet - Page 4

• Manufacturer Part Number: CY7C1399BN-12VXC
• Description: IC SRAM 256KBIT 12NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1399BN-12VXC

• Memory Size: 256K (32K x 8)
• Package / Case: 28-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 12 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 55 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Density: 256Kb
• Access Time (max): 12ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 15b
• Package Type: SOJ
• Operating Temp Range: 0C to 70C
• Supply Current: 55mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Memory Configuration: 32K X 8
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: SOJ
• No. Of Pins: 28
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1988-5; CY7C1399BN-12VXC

Document #: 001-06490 Rev. *C
Data Retention Waveform
Data Retention Characteristics
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2
Notes:
10. Device is continuously selected. OE, CE = V
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
V
I
t
t
CCDR
CDR
R
DR
DATA OUT
DATA OUT
CURRENT
ADDRESS
SUPPLY
Parameter
V
CE
V
CC
OE
CE
CC
[10, 11]
[11, 12]
PREVIOUS DATA VALID
HIGH IMPEDANCE
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
t
PU
for Data Retention
t
LZCE
Description
t
t
IL
LZOE
ACE
.
(Over the Operating Range - L version only)
t
t
OHA
50%
CDR
t
DOE
3.0V
t
AA
t
RC
DATA RETENTION MODE
V
CE > V
V
V
CC
IN
IN
> V
< 0.3V
t
V
= V
RC
DR
Conditions
CC
CC
DR
 2V
– 0.3V,
– 0.3V or
= 2.0V,
DATA VALID
Min.
2.0
t
RC
0
0
DATA VALID
3.0V
t
R
t
t
HZOE
HZCE
CY7C1399BN
t
PD
Max.
20
50%
IMPEDANCE
Page 4 of 8
HIGH
Unit
A
ns
ns
V
ICC
ISB
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