CY7C1399BN-12VXC Cypress Semiconductor Corp, CY7C1399BN-12VXC Datasheet - Page 2

• Manufacturer Part Number: CY7C1399BN-12VXC
• Description: IC SRAM 256KBIT 12NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1399BN-12VXC

• Memory Size: 256K (32K x 8)
• Package / Case: 28-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 12 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 55 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Density: 256Kb
• Access Time (max): 12ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 15b
• Package Type: SOJ
• Operating Temp Range: 0C to 70C
• Supply Current: 55mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Memory Configuration: 32K X 8
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: SOJ
• No. Of Pins: 28
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1988-5; CY7C1399BN-12VXC

Document #: 001-06490 Rev. *C
Pin Configuration
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65C to +150C
Ambient Temperature with
Power Applied............................................. –55C to +125C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Electrical Characteristics
V
V
V
V
I
I
I
I
I
Notes:
Parameter
IX
OZ
CC
SB1
SB2
2. Minimum voltage is equal to – 2.0V for pulse durations of less than 20 ns.
3. Device draws low standby current regardless of switching on the addresses.
OH
OL
IH
IL
Output HIGH Voltage
Output LOW Voltage
Output Leakage
Current
Supply Current
Power-Down
Current—
TTL Inputs
Power-Down
Current— CMOS
Inputs
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
V
Automatic CE
Automatic CE
CC
[2]
[2]
....................................–0.5V to V
Operating
Description
[3]
.................................–0.5V to V
CC
V
WE
A
A
OE
CC
A
A
A
A
A
A
A
A
A
10
11
to Relative GND
1
2
3
4
5
6
8
9
7
22
23
24
25
26
4
5
6
7
27
28
1
2
3
[2]
Over the Operating Range
GND  V
Output Disabled
f = f
Max. V
V
f = f
Max. V
V
WE V
f = f
V
V
V
IN
IN
CC
CC
CC
MAX
MAX
MAX
[2]
 V
 V
= Max., I
= Min., I
= Min., I
.... –0.5V to +4.6V
CC
CC
IH
CC
CC
= 1/t
, or V
I
– 0.3V, or V
– 0.3V or WE 0.3V,
, CE  V
, CE  V
 V
RC
Test Conditions
OL
OUT
OH
CC
IN
CC
CC
= 4.0 mA
 V
,
= –2.0 mA
= 0 mA,
IH
CC
+ 0.5V
+ 0.5V
IL
,
IN
,
– 0.3V,
 0.3V,
Top View
TSOP
[1]
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Comm’l
Comm’l (L)
Ind’l
Auto-A
Comm’l
Comm’l (L)
Ind’l
Auto-A
Commercial
Industrial
Automotive-A
Range
Min.
–0.3
2.4
2.2
–1
–5
-12
–40
–40
Temperature
0
V

Max.
0.3V
500
500
Ambient
C to +70
0.4
0.8


CC
+1
+5
55
50
5
4
5
C to +85
C to +85
21
20
19
18
17
16
15
14
13
12
11
10
9
8
+
A
CE
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
A
A
A
0
14
13
12

Min.
7
6
5
4
3
2
1
0
–0.3
C


2.4
2.2
–1
–5
CY7C1399BN
C
C
-15
V
3.3V 300 mV
Max.
0.3V
500
500
0.4
0.8
CC
+1
+5
50
5
5
Page 2 of 8
+
V
CC
Unit
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
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