CY7C1399BN-12VXC Cypress Semiconductor Corp, CY7C1399BN-12VXC Datasheet - Page 3

• Manufacturer Part Number: CY7C1399BN-12VXC
• Description: IC SRAM 256KBIT 12NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1399BN-12VXC

• Memory Size: 256K (32K x 8)
• Package / Case: 28-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 12 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 55 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Density: 256Kb
• Access Time (max): 12ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 15b
• Package Type: SOJ
• Operating Temp Range: 0C to 70C
• Supply Current: 55mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Memory Configuration: 32K X 8
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: SOJ
• No. Of Pins: 28
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1988-5; CY7C1399BN-12VXC

Document #: 001-06490 Rev. *C
Capacitance
AC Test Loads and Waveforms
Switching Characteristics
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
C
C
C
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
4. Tested initially and after any design or process changes that may affect these parameters.
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
6. At any given temperature and voltage condition, t
7. t
8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
9. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
Parameter
OUTPUT
IN
IN
OUT
INCLUDING
I
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
JIG AND
OL
HZOE
: Addresses
: Controls
SCOPE
3.3V
/I
OH
, t
and capacitance C
HZCE
Parameter
[8, 9]
, t
C
HZWE
L
[4]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
are specified with C
R1 317
L
= 30 pF.
R2
351
Description
[6]
Over the Operating Range
[6]
L
[6, 7]
[8]
[6]
[6, 7]
Input Capacitance
Output Capacitance
GND
= 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage.
3.0V
 3 ns
[5]
Description
HZCE
10%
is less than t
ALL INPUT PULSES
90%
LZCE
Min.
12
12
3
0
3
0
8
8
0
0
8
7
0
3
, t
HZOE
[5]
T
V
A
CC
-12
= 25C, f = 1 MHz,
is less than t
= 3.3V
Max.
Test Conditions
12
12
12
5
5
6
7
90%
HZWE
10%
LZOE
 3 ns
and t
, and t
Min.
15
15
10
10
10
SD
3
0
3
0
0
0
8
0
3
.
HZWE
-15
Equivalent to:
is less than t
Max.
OUTPUT
15
15
15
6
6
7
7
LZWE
Max.
5
6
6
THÉVENIN EQUIVALENT
for any given device.
CY7C1399BN
167
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Page 3 of 8
Unit
pF
pF
pF
1.73V
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