CY7C199CN-15PXC Cypress Semiconductor Corp, CY7C199CN-15PXC Datasheet

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CY7C199CN-15PXC

Manufacturer Part Number
CY7C199CN-15PXC
Description
IC SRAM 256KBIT 15NS 28DIP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheets

Specifications of CY7C199CN-15PXC

Memory Size
256K (32K x 8)
Package / Case
28-DIP (0.300", 7.62mm)
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
15ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Access Time
15 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
80 mA
Organization
32 K x 8
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Number Of Ports
1
Operating Supply Voltage
5 V
Density
256Kb
Access Time (max)
15ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
15b
Package Type
PDIP
Operating Temp Range
0C to 70C
Supply Current
80mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
28
Word Size
8b
Number Of Words
32K
Memory Configuration
32K X 8
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
DIP
No. Of Pins
28
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2158-5
CY7C199CN-15PXC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C199CN-15PXC
Manufacturer:
CYPRESSRESS
Quantity:
5 530
Part Number:
CY7C199CN-15PXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Cypress Semiconductor Corporation
Document #: 001-06435 Rev. *D
Features
Logic Block Diagram
Product Portfolio
Note
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
(low power)
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines on www.cypress.com.
• Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed and power
• TTL-compatible inputs and outputs
• 2.0V data retention
• Low CMOS standby power
• Automated power down when deselected
• Available in Pb-free 28-pin TSOP I, 28-pin Molded SOJ and
28-pin DIP packages
Column Decoder
RAM Array
Input Buffer
–12
500
12
85
198 Champion Court
General Description
The CY7C199CN is a high performance CMOS Asynchronous
SRAM organized as 32K by 8 bits that supports an
asynchronous memory interface. The device features an
automatic
consumption when deselected.
See the
complete description of read and write modes.
The CY7C199CN is available in Pb-free 28-pin TSOP I, 28-pin
Molded SOJ and 28-pin DIP package(s).
–15
500
15
80
Power
Circuit
Down
256K (32K x 8) Static RAM
“Truth Table” on page 3
San Jose
power
X
,
down
–20
500
CA 95134-1709
20
75
[1]
A
feature
OE
X
I/Ox
CE
WE
Revised December 13, 2010
in this data sheet for a
that
CY7C199CN
–25
500
25
75
reduces
408-943-2600
power
Unit
mA
A
ns
[+] Feedback

Related parts for CY7C199CN-15PXC

CY7C199CN-15PXC Summary of contents

Page 1

... The device features an automatic power consumption when deselected. See the “Truth Table” on page 3 complete description of read and write modes. The CY7C199CN is available in Pb-free 28-pin TSOP I, 28-pin Molded SOJ and 28-pin DIP package(s). Input Buffer RAM Array Power Column Decoder Down ...

Page 2

... Pin Layout and Specifications 28 DIP Document #: 001-06435 Rev TSOP 13.4 mm CY7C199CN 28 SOJ Page [+] Feedback ...

Page 3

... WE IOx X High-Z H Data Out L Data In H High-Z Selected, Outputs Disabled Description 0°C to 70°C –40°C to 85°C CY7C199CN SOJ TSOP 10, 11, 12, 13, 14, 15, 16, 17 18, 19, 20, 22, 23, 24, 25, 18 Mode Power Deselect/Power Down Stand Read Active (I ...

Page 4

... CE  –  V  max  V – 0.3V, –  V  0.3V – 0.3V Output Disabled – CC – CC CY7C199CN –12 –15 Unit Min Max Min Max 2 0 –0.5 0.8 –0.5 0.8 V 2.4 – 2.4 – V – 0.4 – 0.4 V – ...

Page 5

... Tested initially and after any design or process change that may affect these parameters. Document #: 001-06435 Rev. *D Conditions T = 25° MHz 5. Conditions TSOP I Still air, soldered × 4.5 88.6 square inch, two–layer printed circuit board 21. jig ita Description CY7C199CN Max Unit SOJ DIP Unit 79 69.33 °C/W 41.42 31. & ...

Page 6

...  V  0.3V V – 0. less than less than t , and t HZCE LZCE HZOE LZOE “” on page 1. Transitions are measured ± 200 mV from steady state voltage. CY7C199CN –20 –25 Unit Min Max Min Max 20 – 25 – ns – 20 – – 3 – ...

Page 7

... WE is HIGH for read cycle. 11. This cycle is OE controlled and WE is HIGH read cycle. 12. Address valid before or similar with CE transition LOW. Document #: 001-06435 Rev. *D DATA RETENTION MODE OHA ACE t DOE t LZOE t LZCE t PU 50% CY7C199CN t R Data Valid t HZCE t HZOE High Z Data Valid t PD 50% Page [+] Feedback ...

Page 8

... During this period the IOs are in output state and input signals must not be applied. 16. This cycle is CE controlled. 17 goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. Document #: 001-06435 Rev SCE PWE t SD Data-In Valid SCE Data-In Valid . CY7C199CN High Z Page [+] Feedback ...

Page 9

... Write Cycle 3 (WE controlled, OE low) Address Data Undefined In Out see footnotes Note 18. The cycle is WE controlled, OE LOW. The minimum write cycle time is the sum of t Document #: 001-06435 Rev SCE PWE Data In Valid t HZWE and t . HZWE SD CY7C199CN t HA Undefined See Footnotes t LZWE Page [+] Feedback ...

Page 10

... Ordering Information Contact local sales representative regarding availability of these parts. Speed Package Ordering Code (ns) Diagram 12 CY7C199CN-12VXA 51-85031 15 CY7C199CN-15PXC 51-85014 CY7C199CN-15VXC 51-85031 CY7C199CNL-15VXI 51-85031 20 CY7C199CN-20ZXI 51-85071 Ordering Code Definitions Document #: 001-06435 Rev. *D Package Type 28-Lead (300-Mil) Molded SOJ, Pb-free 28 DIP (6.9 x 35.6 x 3.5 mm), Pb-free ...

Page 11

... Package Diagrams Figure 1. 28-pin TSOP 13.4 mm), 51-85071 Document #: 001-06435 Rev. *D CY7C199CN 51-85071 *H Page [+] Feedback ...

Page 12

... Package Diagrams (continued) Figure 2. 28-pin (300 Mil) Molded SOJ, 51-85031 Document #: 001-06435 Rev. *D CY7C199CN 51-85031 *D Page [+] Feedback ...

Page 13

... Package Diagrams (continued) All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 001-06435 Rev. *D Figure 3. 28-pin (300 Mil) PDIP, 51-85014 CY7C199CN 51-85014 *E Page [+] Feedback ...

Page 14

... Document History Page Document Title: CY7C199CN, 256K (32K x 8) Static RAM Document Number: 001-06435 Issue REV. ECN No. Date ** 430363 See ECN *A 684342 See ECN *B 839904 See ECN *C 2896044 03/19/2010 *D 3108898 12/13/2010 Document #: 001-06435 Rev. *D © Cypress Semiconductor Corporation, 2006-2010. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product ...

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