IDT71016S12YG IDT, Integrated Device Technology Inc, IDT71016S12YG Datasheet - Page 7

• Manufacturer Part Number: IDT71016S12YG
• Description: IC SRAM 1MBIT 12NS 44SOJ
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71016S12YG

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (64K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71016S12YG

Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)
Timing Waveform of Write Cycle No. 3 (BHE, BLE Controlled Timing)
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, t
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
DATA
DATA
ADDRESS
BHE
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit)
ADDRESS
BHE
data to be placed on the bus for the required t
minimum write pulse is as short as the specified t
DATA
DATA
,
,
OUT
OUT
BLE
BLE
WE
WE
CS
CS
IN
IN
t
AS
t
AS
DW
. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the
WP
.
t
t
AW
AW
t
CW
t
t
WP
WP
(2)
t
t
t
WC
WC
BW
6.42
t
WP
CW
7
must be greater than or equal to t
t
(2)
BW
DATA
t
DATA
t
DW
DW
IN
IN
VALID
Commercial and Industrial Temperature Ranges
VALID
t
t
DH
DH
t
t
WR
WR
WHZ
+ t
DW
to allow the I/O drivers to turn off and
(1,4)
3210 drw 10
3210 drw 9
(1,4)
,
,