IS42S32800D-7TL ISSI, Integrated Silicon Solution Inc, IS42S32800D-7TL Datasheet - Page 16
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IS42S32800D-7TL
Manufacturer Part Number
IS42S32800D-7TL
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Specifications of IS42S32800D-7TL
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
13b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1084
IS42S32800D-7TL
IS42S32800D-7TL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800D-7TL
Manufacturer:
TRACO
Quantity:
101
Part Number:
IS42S32800D-7TL
Manufacturer:
ISSI
Quantity:
20 000
Part Number:
IS42S32800D-7TLI
Manufacturer:
ISSI
Quantity:
20 000
IS42S32800D, IS45S32800D
AC ELECTRICAL CHARACTERISTICS
Notes:
1. The power-on sequence must be executed before starting memory operation.
2. measured with t
3. The reference level is 1.4V when measuring input signal timing. Rise and fall times are measured between V
4. Use recommended operation conditions.
5. Self-Refresh Mode is not supported for A2 grade with T
16
Symbol Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ck3
ck2
ac3
ac2
chi
cl
oh3
oh2
lz
hz
ds
dh
as
ah
cks
ckh
cs
ch
rc
ras
rp
rcd
rrd
dpl
dal
mrd
dde
xsr
t
ref
(max).
Clock Cycle Time
Access Time From CLK
CLK HIGH Level Width
CLK LOW Level Width
Output Data Hold Time
Output LOW Impedance Time
Output HIGH Impedance Time
Input Data Setup Time
Input Data Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
Command Setup Time (CS, RAS, CAS, WE, DQM)
Command Hold Time (CS, RAS, CAS, WE, DQM)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Active Command To Read / Write Command Delay Time
Command Period (ACT [0] to ACT[1])
Input Data To Precharge
Command Delay time
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
Mode Register Program Time
Power Down Exit Setup Time
Self-Refresh Exit Time
Transition Time
Refresh Cycle Time (4096)
t
= 1 ns. If clock rising time is longer than 1ns, (t
(2)
(2)
(2)
(2)
(2)
(2)
(5)
T
a
≤ 70
T
o
a
C Com., Ind., A1, A2
≤ 85
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
o
C Ind., A1, A2
T
a
(1,2,3,4)
> 85
(2)
(2)
a
o
> +85
C A2
o
C.
r
/2 - 0.5) ns should be added to the parameter.
Min. Max.
2.5
2.5
2.7
2.7
2.7
1.5
1.0
1.5
1.0
1.5
1.0
1.5
1.0
0.3
10
60
42
18
18
12
12
12
70
—
—
30
—
—
—
6
0
6
-6
100K
5.4
6.5
5.4
1.2
64
64
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min. Max.
67.5
2.5
2.5
2.7
2.7
2.7
1.5
1.0
1.5
1.0
1.5
1.0
1.5
1.0
0.3
10
—
—
45
20
20
14
14
35
14
70
—
—
—
7
0
7
Integrated Silicon Solution, Inc. - www.issi.com
-7
100K
5.4
6.5
5.4
1.2
64
64
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
67.5
ih
7.5
2.5
2.5
2.7
2.7
1.5
1.0
1.5
1.0
1.5
1.0
1.5
1.0
7.5
0.3
45
15
15
15
15
30
15
70
—
—
—
—
—
—
—
0
(min.) and V
-75E
100K
Max.
5.5
5.4
1.2
64
64
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
il
12/01/09
Rev. C
Units
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns