IS62WV12816DBLL-45TLI-TR ISSI, IS62WV12816DBLL-45TLI-TR Datasheet - Page 4

• Manufacturer Part Number: IS62WV12816DBLL-45TLI-TR
• Description: SRAM 2Mb 128K x 1645ns Async SRAM
• Manufacturer: ISSI

Specifications of IS62WV12816DBLL-45TLI-TR

• Rohs: yes
• Memory Size: 2 Mbit
• Organization: 128 Kbit x 16
• Access Time: 45 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.5 V
• Maximum Operating Current: 21 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: CMOS
• Factory Pack Quantity: 1000

IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL
DC ELECTRICAL CHARACTERISTICS
Notes:
For IS62/65WV12816DALL:
V
V
For IS62/65WV12816DBLL:
V
V
CAPACITANCE
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
IL
IH
IL
IH
Symbol
V
V
V
V
I
I
Symbol
c
c
(min.) = -1.0V Ac (pluse width < 10ns). Not 100% tested.
(min.) = -2.0V Ac (pluse width < 10ns). Not 100% tested.
LI
Lo
(max.) = V
(max.) = V
oH
oL
IH
IL
In
out
dd
dd
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
+ 1.0V Ac; (pluse width < 10ns). Not 100% tested.
+ 2.0V Ac; (pluse width < 10ns). Not 100% tested.
Parameter
Input Capacitance
Input/Output Capacitance
(1)
Test Conditions
I
I
I
I
GND ≤ V
GND ≤ V
oH
oH
oL
oL
= 0.1 mA
= 2.1 mA
= -0.1 mA
= -1 mA
(Over Operating Range)
In
out
Conditions
V
V
≤ V
out
In
≤ V
dd
= 0V
= 0V
dd
, Outputs Disabled
1.8V ± 10%
1.8V ± 10%
1.8V ± 10%
1.8V ± 10%
Integrated Silicon Solution, Inc. — www.issi.com
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
V
DD
Max.
10
8
Min.
–0.2
–0.2
1.4
2.2
1.4
2.2
–1
–1
—
—
Unit
pF
pF
V
V
dd
dd
Max.
0.2
0.4
0.4
0.6
—
—
1
1
+ 0.2
+ 0.3
Unit
2/4/2013
µA
µA
Rev. B
V
V
V
V
V
V
V
V