IS62WV12816DBLL-45TLI-TR ISSI, IS62WV12816DBLL-45TLI-TR Datasheet - Page 15

• Manufacturer Part Number: IS62WV12816DBLL-45TLI-TR
• Description: SRAM 2Mb 128K x 1645ns Async SRAM
• Manufacturer: ISSI

Specifications of IS62WV12816DBLL-45TLI-TR

• Rohs: yes
• Memory Size: 2 Mbit
• Organization: 128 Kbit x 16
• Access Time: 45 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.5 V
• Maximum Operating Current: 21 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: CMOS
• Factory Pack Quantity: 1000

IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL
DATA RETENTION SWITCHING CHARACTERISTICS
Note:
1. Typical values are measured at V
DATA RETENTION WAVEFORM
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
2/4/2013
Symbol
V
I
t
t
dr
Sdr
rdr
dr
GND
VDD
CS2
V
DR
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
dd
for Data Retention
dd
= V
Test Condition
See Data Retention Waveform
V
(1) 0V < CS2 < 0.2V, or
(2) CS1 ≥ V
(3) LB and UB > V
See Data Retention Waveform
See Data Retention Waveform
dr
dd
(min), T
(CS2 Controlled)
= V
dr
(min),
A
dd
= 25
t
– 0.2V, CS2 > V
SDR
o
dd
C and not 100% tested.
-0.2V, CS1 < 0.2V, CS2 > V
Data Retention Mode
CS2 ≤ 0.2V
dd
- 0.2V or
dd
- 0.2V
Com.
Auto.
Ind.
t
typ.
rc
0
(2)
Min.
1.5
—
—
—
—
—
t
RDR
2
Max.
3.6
20
ns
ns
4
6
Unit
V
µA
µA
µA
µA
15