IS43R16160B-6TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-6TL Datasheet - Page 36

IC DDR SDRAM 256MBIT 66TSOP

IS43R16160B-6TL

Manufacturer Part Number
IS43R16160B-6TL
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS43R16160B-6TL

Package / Case
66-TSOPII
Memory Size
256M (16Mx16)
Format - Memory
RAM
Memory Type
DDR SDRAM
Speed
166MHz
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Data Bus Width
16 bit
Maximum Clock Frequency
167 MHz
Access Time
0.7 ns
Supply Voltage (max)
2.7 V
Supply Voltage (min)
2.3 V
Maximum Operating Current
250 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1086
IS43R16160B-6TL

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IS43R83200B
IS43R16160B, IC43R16160B
36
[SELF REFRESH]
Self -refresh mode is entered by issuing a REFS command (/CS=/RAS=/CAS=L,/WE=H,CKE=L).
Once the self-refresh is initiated, it is maintained as long as CKE is kept low. During the self-
refresh mode, CKE is asynchronous and the only enable input, all other inputs including CLK are
disabled and ignored, so that power consumption due to synchronous inputs is saved. To exit the
self-refresh, supplying stable CLK inputs, asserting DESEL or NOP command and then asserting
CKE for longer than tXSNR/tXSRD.
A0-12
BA0,1
/CLK
/RAS
/CAS
CKE
CLK
/WE
/CS
Self Refresh Exit
Self-Refresh
tXSNR
X
X
tXSRD
Integrated Silicon Solution, Inc.
Y
Y
10/31/08
Rev. B

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