IS43R16160B-6TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-6TL Datasheet - Page 31

• Manufacturer Part Number: IS43R16160B-6TL
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16160B-6TL

• Package / Case: 66-TSOPII
• Memory Size: 256M (16Mx16)
• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 167 MHz
• Access Time: 0.7 ns
• Supply Voltage (max): 2.7 V
• Supply Voltage (min): 2.3 V
• Maximum Operating Current: 250 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1086; IS43R16160B-6TL

DDR SDRAM (Rev.1.1)
IS43R83200B
IS43R16160B, IC43R16160B
Integrated Silicon Solution, Inc.
Rev. B
10/31/08
[Read Interrupted by Burst Stop]
is minimum 1 CLK. A TERM command to output disable latency is equivalent to the /CAS Latency.
As a result, READ to TERM interval determines valid data length to be output. The figure below
shows examples of BL=8.
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval
CL=2.0
CL=2.5
Command
Command
Command
Command
Command
Command
Preliminary
DQS
DQS
DQS
DQS
/CLK
Preliminary
DQS
DQS
CLK
DQ
DQ
DQ
DQ
DQ
DQ
READ
READ
Read Interrupted by TERM (BL=8)
READ
READ
READ
READ
TERM
TERM
TERM
TERM
Q0
Q0
Q0
256M Double Data Rate Synchronous DRAM
Q1
Q1
Q1
TERM
Q0
Q0
TERM
Q0
Q2
Q2
Q1
Q1
Q1
Q3
Q3
Q2
Q2
Q4
Q3
Q3
Q5
Q4
Q5
A3S56D30/40ETP
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