70V3319S133BF IDT, 70V3319S133BF Datasheet - Page 8

• Manufacturer Part Number: 70V3319S133BF
• Description: SRAM 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM
• Manufacturer: IDT

Specifications of 70V3319S133BF

• Part # Aliases: IDT70V3319S133BF

Capacitance
NOTES:
1. These parameters are determined by device characterization, but are not
2. 3dV references the interpolated capacitance when the input and output switch
3. C
NOTE:
1. At V
2. V
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Symbol
V
V
V
V
C
production tested.
from 0V to 3V or from 3V to 0V.
Symbol
OL
OH
OL
OH
C
OUT
OUT
DDQ
IN
|I
|I
LO
(3.3V)
(2.5V)
(3.3V)
(2.5V)
LI
(3)
DD
|
also references C
|
is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
< 2.0V leakages are undefined.
Input Capacitance
Output Capacitance
Input Leakage Current
Output Leakage Currentt
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Parameter
I/O
(1)
.
Parameter
(T
A
(2)
(2)
(2)
(2)
= +25°C, F = 1.0MH
(1)
(1)
Conditions
V
V
OUT
IN
= 3dV
= 3dV
(2)
I
I
I
I
V
CE
OL
OH
OL
OH
DDQ
0
= +4mA, V
= +2mA, V
= -4mA, V
= -2mA, V
Max.
= V
10.5
= Max., V
8
IH
Z
or CE
5623 tbl 07
)
Unit
pF
pF
DDQ
DDQ
DDQ
DDQ
IN
1
6.42
= 0V to V
= V
= Min.
= Min.
= Min.
= Min.
8
IL
, V
Test Conditions
OUT
DDQ
(V
= 0V to V
DD
= 3.3V ± 150mV)
DDQ
Industrial and Commercial Temperature Ranges
Min.
2.4
2.0
___
___
___
___
70V3319/99S
Max.
0.4
0.4
10
10
___
___
5623 tbl 08
Unit
µ A
µ A
V
V
V
V