E520.03A61AC ELMOS Semiconductor, E520.03A61AC Datasheet - Page 5

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E520.03A61AC

Manufacturer Part Number
E520.03A61AC
Description
Motor / Motion / Ignition Controllers & Drivers 8x low side driver
Manufacturer
ELMOS Semiconductor
Type
Unipolar Stepper Motor Driverr
Datasheet

Specifications of E520.03A61AC

Rohs
yes
Product
Stepper Motor Controllers / Drivers
Operating Supply Voltage
3.3 V, 5 V
Supply Current
5 mA
Operating Temperature
- 40 C to + 125 C
Mounting Style
SMD/SMT
Package / Case
QFN-32
Number Of Outputs
8
Output Current
300 mA
Output Voltage
3 V to 25 V
Power Dissipation
2.8 W
1 Absolute Maximum Ratings
Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress rat-
ings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. All voltages
with respect to ground. Currents flowing into terminals are positive, those drawn out of a terminal are negative.
Connect pin TEST to GND
1) The package was qualified at ambient temperatures -40...125°C,
2) packages according to JEDEC standard JESD-51-6,7.
3) packages according to JEDEC standard JESD-51-5.
3) The maximum allowed power dissipation, calculated at TJ,max=150°C is a function of the ambient temperature and the
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
2) and 3) Using same structure on application board will lead to R
Description
Logic Supply Voltage
Transient Output Voltage
Output Current
Output Current (transient 500msec)
Input Voltage
Input Current
VBAT_SENSE Input Voltage
VBAT_SENSE Input Current
Junction Temperature
Ambient Temperature
Storage Temperature
Thermal Resistance
Junction to Ambient QFN32L5
Thermal Resistance
Junction to Ambient QFN20L5
Thermal Resistance
Junction to Ambient SOIC28
Thermal Resistance
Junction to Ambient SOIC20
Power Dissipation
Power Dissipation
Power Dissipation
12 / 8 ChANNeL LOw SIDe DRIveR wITh STALL DeTeCTION
PRODUCTION DATA - JUL 24, 2012
ELMOS Semiconductor AG
for power dissipation < 1W also up to 150°C.
If higher ambient temperatures are focused please contact ELMOS AG.
Power dissipation has to be taken into account based on R
Actual thermal performance will depend on die-size, die-pad size, availability of an exposed die-pad and the concentration
of hot spots.
thermal resistance R
3)
3)
3)
Package QFN32L5
Package QFN32L5
Package QFN32L5
TH,JA
1)
. It may be calculated as :
3)
3)
2)
2)
Max. 500ms
Condition
Schaffner Pulse 2 IOUT
SPI interface pins VIN
SPI interface pins IIN
T
T
T
A
A
A
< 85°C
< 105°C
< 125°C
Data Sheet
Pdmax=(TJ,max-TA)/RTH_JA.
5/29
TH,JA
values.
TH,JA
Symbol
VDD
VOUT
IOUT
VBAT_SENSE
IVBAT_SENSE
TJ
TA
TSTG
R
R
R
R
PD
PD
PD
in the specified temperature region.
TH,JA
TH,JA
TH,JA
TH,JA
105
125
85
Min
-0.3
-0.3
-0.3
-10
-0.3
-10
-40
-40
-40
21
22
71
76
e520.01/02/03/08
QM-No.: 25DS0054E.02
23
Max
6
42
350
600
VDD+0.3
10
42
10
150
125
150
24
87
94
2800
1950
1080
Unit
V
V
mA
mA
V
mA
V
mA
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
mW
mW
mW

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