HEF4093BT-Q100 NXP Semiconductors, HEF4093BT-Q100 Datasheet - Page 9

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HEF4093BT-Q100

Manufacturer Part Number
HEF4093BT-Q100
Description
Logic Gates 2-IN NAND Gate 15V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of HEF4093BT-Q100

Product
NAND
Number Of Gates
4
Number Of Lines (input / Output)
2 /
High Level Output Current
- 2.4 mA
Low Level Output Current
2.4 mA
Supply Voltage - Max
15 V
Supply Voltage - Min
3 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SO-14
Maximum Power Dissipation
500 mW
Minimum Operating Temperature
- 40 C
Number Of Input Lines
2
Operating Temperature Range
- 40 C to + 125 C
Output Current
10 mA
Power Dissipation
500 mW
Part # Aliases
HEF4093BT-Q100,118
NXP Semiconductors
14. Application information
HEF4093B_Q100
Product data sheet
Fig 9.
Fig 10. Astable multivibrator
T
Typical switching levels as a function of supply voltage
amb
= 25 C.
V
DD
(V)
V
I
10
5
0
2.5
Some examples of applications for the HEF4093B-Q100 are:
If a Schmitt trigger is driven via a high-impedance (R > 1 k), then it is necessary to
incorporate a capacitor C with a value of
on the edges of a pulse.
C
the circuit board layout.
Remark: The two inputs may be connected together, but this will result in a larger
through-current at the moment of switching.
1
2
p
is the external parasitic capacitance between inputs and output; the value depends on
Wave and pulse shapers
Astable multivibrators
Monostable multivibrators
V
DD
14
7
5
001aag113
3
All information provided in this document is subject to legal disclaimers.
7.5
Rev. 1 — 12 July 2012
10
Fig 11. Schmitt trigger driven via a
------
C
C
12.5
P
high-impedance input
>
V
V
V
T+
T−
V
------------------------ -
DD
DD
V
H
Quad 2-input NAND Schmitt trigger
R
V
15
SS
HEF4093B-Q100
; otherwise oscillation can occur
V
C
DD
1
2
001aag112
(V)
V
17.5
C p
DD
14
7
001aag114
© NXP B.V. 2012. All rights reserved.
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